PSMN023-80LS,115

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The PSMN023-80LS,115 is a silicon N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) offered in a very small, surface mount solution. It is part of the PSM series and has a low-voltage breakdown rating of 80 V. This device’s high current and low on- resistance allow increased system efficiency in a variety of applications ranging from audio amplifiers to power management ICs. This article will look at what applications the PSMN023-80LS,115 is best suited for and how its operating principles work.

Applications

The PSMN023-80LS,115 is intended for use in applications that require low-voltage, low-conductance switching such as audio amplifiers, power supplies or power management ICs. This device is particularly well-suited for use in audio amplifiers because of its low on-resistance and high current. Power supplies and power management ICs that require low-voltage switching also benefit from the excellent switching characteristics provided by this MOSFET. The PSMN023-80LS,115 is also ideal for automotive applications when used in combination with other vehicles ICs.

Working Principle

MOSFETs such as the PSMN023-80LS,115 are driven by a voltage applied to the gate in order to switch current across the drain and source terminals. This voltage alters the electric field across the gate oxide, creating holes and electrons in the channel region beneath the gate that allow for the conduction of current. This conduction of current is what allows for switching. The state of the MOSFET is determined by the voltage applied to the gate. When the applied voltage is low, the MOSFET is in an OFF state, meaning it will not conduct current. When the applied voltage is high, the MOSFET is in an ON state, meaning it will conduct current.

The PSMN023-80LS,115 has a low-voltage breakdown rating of 80 V and a low on-resistance of 0.022 Ω. The low-voltage breakdown rating means that the MOSFET can handle higher voltages, making it suitable for use in applications such as power supplies and audio amplifiers. The low on-resistance reduces the amount of power dissipated in the MOSFET, resulting in increased efficiency for the applications it is used for.

Conclusion

The PSMN023-80LS,115 is a low-voltage, N-channel MOSFET designed for use in low-conductance switching applications. The low-voltage, breakdown rating and low on-resistance of this device make it ideal for use in audio amplifiers, power supplies or power management ICs. The MOSFET is driven by a voltage applied to the gate in order to switch current across the drain and source terminals, with the state of the MOSFET being dictated by the applied voltage. Thus, the PSMN023-80LS,115 is an ideal device for a variety of applications.

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