Allicdata Part #: | 568-8527-2-ND |
Manufacturer Part#: |
PSMN012-25YLC,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 25V 33A LFPAK |
More Detail: | N-Channel 25V 33A (Tc) 26W (Tc) Surface Mount LFPA... |
DataSheet: | PSMN012-25YLC,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.95V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 26W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 528pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 12.6 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The PSMN012-25YLC,115 is a Power MOSFET version of the familiar Field Effect Transistor (FET). These transistors offer better performance than their BJT (bipolar junction transistor) counterparts and are ideal for applications that demand high speed switching, low on-resistance, and low voltage drop. They are a great choice for use in applications such as power conversion, motor control, circuit protection, and other energy-intensive loads.
The PSMN012-25YLC,115 works by utilizing a gate terminal that can be used to control the flow of current. When the electric field generated by the gate of the transistor is held at a certain voltage, the drain and source terminals will conduct current thanks to the electric field\'s ability to change the conductivity of the semiconductor (N-type or P-type). This allows the transistor to act as either an amplifier or switch depending on the device\'s configuration.
The PSMN012-25YLC,115 is optimized for low on-resistance and low power dissipation. It can operate at very low currents and has low gate charge. It also has low input capacitance which makes it an ideal choice for high-speed switching applications. Additionally, due to its high breakdown voltage, it is well suited for applications that require high voltage protection or need to drive large power loads.
The PSMN012-25YLC,115 is suitable for use in a wide range of applications, from consumer electronics and automotive to industrial and medical. Its high efficiency, speed, and low voltage drop make it an ideal choice for a variety of applications. In addition to this, its low power dissipation and low on-resistance make it attractive to designers of all types of power-related circuits, especially those that require high frequency operation.
The PSMN012-25YLC,115 is an excellent choice for any application that demands high speed, low on-resistance, and low voltage drop. Its low input capacitance and high breakdown voltage make it suitable for high voltage and large power applications. Its low power dissipation and high efficiency make it ideal for energy-intensive loads. Its versatility and ease of use make it a great choice for engineers and hobbyists alike.
The specific data is subject to PDF, and the above content is for reference
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