Allicdata Part #: | 568-6732-2-ND |
Manufacturer Part#: |
PSMN3R2-25YLC,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 25V 100A LFPAK |
More Detail: | N-Channel 25V 100A (Tc) 79W (Tc) Surface Mount LFP... |
DataSheet: | PSMN3R2-25YLC,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.95V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1781pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.4 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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.The PSMN3R2-25YLC,115 is a discrete silicon N-channel MOSFET transistor, making it a single type field effect transistor, or FET.
Application Field
This transistor is generally used as a switch or in an amplifier, where its silicon construction allows it to handle higher voltages and currents as compared to typical semiconductor devices. It can be used in power management, such as for DC/DC converters, for general switches and for high current applications, working to control the current output from different power sources.
The low on-state resistance of this transistor is an advantage when it comes to its use in power systems, making it the ideal choice for high current switching and regulating applications.
The PSMN3R2-25YLC,115 is also suitable for circuit protection, providing reliable over-current or over-voltage protection of power or signal lines.
The PSMN3R2-25YLC,115 can even be used as a switch to control a wide range of audio devices and can be connected to most transducers, acting as a general amplifier for them. With its high current capacity, it is the ideal switch for many consumer audio electronics, such as amplifiers and receivers.
Working Principle
The functioning of a PSMN3R2-25YLC,115 is based on the principle of three field effect transistors, or FETs, connected in parallel, forming an "off" state, which can be transferred to an "on" state by applying a gate voltage. The gate voltage controls the current that flows through the device. When the voltage applied to the gate is insufficient, the device remains in its "off" state, thereby restricting the current flow.
However, when a higher volt is applied to it, a higher current begins to flow through it, allowing it to act as a switch. This phenomenon is known as "Punch-Through Inversion".
The amount of current that flows through the device depends on the resistance between the source and drain.
When a voltage is applied to the gate, it creates an electric field which causes electrons to move from source to drain. This results in a current flow between the two electrodes.
The basic operation of the device is based on the following principle: a greater current flows through the device when a greater voltage is applied to the gate.
The device can be used to manage the current output from different power sources and regular components, providing reliable current and overvoltage protection. It can even be used as a switch for a variety of audio devices and it can work as an amplifier for certain transducers.
The PSMN3R2-25YLC,115 is a discrete silicon N-channel MOSFET transistor, providing excellent performance in a number of applications. Its low on-state resistance makes it the ideal choice for high current switching and regulating applications, and it can provide reliable current and overvoltage protection. Additionally, it can act as an amplifier for certain transducers, allowing it to be used in a wide range of audio devices.
The specific data is subject to PDF, and the above content is for reference
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