Allicdata Part #: | 568-6902-2-ND |
Manufacturer Part#: |
PSMN011-30YL,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 30V 51A LFPAK |
More Detail: | N-Channel 30V 51A (Tj) 49W (Tc) Surface Mount LFPA... |
DataSheet: | PSMN011-30YL,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 49W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 726pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14.8nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 10.7 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 51A (Tj) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The PSMN011-30YL,115 is a single N-channel enhancement MOSFET, or metal-oxide-semiconductor field-effect transistor. It is an active component with three terminals — the source, gate, and drain — and is used in a range of electronic devices, from computers to radios. This component is designed for high-frequency applications and offers a maximum drain-source breakdown voltage of 30V and drain-current of 15A.
The PSMN011-30YL,115 is made from a semiconductor material—usually silicon— in which the insulating oxide layer is artificially engineered. The source and drain are P or N type regions and the gate is designed to control the current through the channel. The gate is insulated from the channel by the oxide which makes it possible to apply a voltage to the gate allowing the current between the source and drain to be manipulated. This helps to provide an efficient and reversible electronic control of the current.
The main use of this device is when it is used as a switch, meaning that it can both connect and disconnect the source and drain, which makes it ideal for switching applications. It has also been used to create logic gates and amplifiers, and it can be used to amplify signals with extremely low noise characteristics. As the voltage applied to the gate is the main control mechanism, this makes the device highly voltage-sensitive, which opens up the possibility of use in sensitive electronic circuits.
The principle of operation is similar to that of equivalent components; the three terminals – source, gate and drain – are connected together. A gate voltage, usually of a few volts, is applied to the gate terminal to control the source/drain current flowing between the source and drain terminals. When the gate voltage is zero or negative, the MOSFET is in the off-state and no current flows between the source and drain. When the gate voltage is increased, the MOSFET is turned on, allowing the source/drain current to flow.
The PSMN011-30LY,115 is an excellent component for a variety of applications. It can serve as an efficient switch and amplifier in high-frequency applications, used to reduce noise and distortion in sensitive circuits. As such, it is a versatile component and can be used in a range of electronic devices, from smartphones to radio transmitters.
The specific data is subject to PDF, and the above content is for reference
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