Allicdata Part #: | 568-5580-2-ND |
Manufacturer Part#: |
PSMN017-30LL,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH QFN3333 |
More Detail: | N-Channel 30V 15A (Tc) 37W (Tc) Surface Mount 8-DF... |
DataSheet: | PSMN017-30LL,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-DFN3333 (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 37W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 526pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The PSMN017-30LL is a N-Channel, enhancement-mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is used for various applications. Many modern electronic circuits and devices rely on MOSFETs because they are versatile and reliable components that can effectively switch and amplify signals. The PSMN017-30LL is a high-quality device, suitable for a wide range of different uses and environments.
Applications of the PSMN017-30LL MOSFET include power converters, voltage regulation, motor control, power amplifiers, inverters, and many more. In particular, this device is often used in applications that require high efficiency, such as AC-to-DC power converters, SERVO-motor control, switching solutions, and high frequency circuits. The PSMN017-30LL is a highly efficient MOSFET, designed for switching applications that require high frequency, short switching times, and low power loss.
The PSMN017-30LL is a single MOSFET, with a nominal drain-to-source voltage rating (VDSS) of 30 V. Its maximum drain-source current (IDSS) is 17 A, and its drain-source on-resistance (RDS) is 0.01 ohms at 10 V. This MOSFET also has a maximum gate-source voltage rating (VGS) of ±20 V and a body-drain diode reverse recovery time (tRR) of 8 nsec. The device is packaged in a standard TO-263-2 package and is Pb-free and RoHS-Compliant.
When it comes to its working principle, the PSMN017-30LL utilises the combined forces of a metal oxide layer, a conductor, and an electric field to operate. The metal oxide layer acts as a gate between the two conductors, while the electric field controls the flow of current. When the gate is opened, electrons can flow through the metal oxide layer, and current flows through the device. When the gate is closed, no current flows, allowing the device to act as an efficient switch.
The PSMN017-30LL is a powerful and versatile MOSFET that can be used in a wide range of applications. Its high efficiency and low voltage ratings make it an ideal choice for high frequency circuits, motor control, SERVO-motors, inverters, and other types of switching solutions. This reliable, high-quality device is Pb-free and RoHS-compliant, making it suitable for modern applications. Additionally, its TO-263-2 package allows for ease of installation, making it an excellent choice for a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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