PSMN013-100BS,118

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The PSMN013-100BS,118 is a device used in transistors and FETs and is part of the single type transistors and MOSFETs. It is primarily used in electronic systems for which a very low on-resistance is needed or when there is the need for very fast switching. These devices are often used in low voltage applications and are able to provide very high output current and excellent power dissipation. The PSMN013-100BS,118 is designed to provide performance in a wide variety of applications including power management and signal switching in digital and power electronics, as well as audio amplifiers, signal conditioning, and embedded systems. The device is available in a maximum drain-source voltage of 100V and can provide a total output power of 540mW.

The PSMN013-100BS,118 is based on a vertical design and consists of two main elements: the main channel and a side channel. The main channel is a vertical N-channel FET, consisting of a gate and a source region. This channel provides the main current path, allowing it to pass through the device. The side channel is used to control the main channel by providing a switchable path for the current. Both channels are connected by a floating gate, allowing the main channel to be triggered on or off as required. The main channel is also connected to a P-type bulk (or substrate) region, which forms the main connection to the drain and source. This bulk region provides a low frequency capacitance, allowing the device to operate in the multi-GHz frequencies.

The PSMN013-100BS,118 utilizes a transconductance gain far higher than that of most FETs and is highly linear, making it suitable for applications that require a wide frequency response. The device has a low capacitance, low noise and can handle a wide range of currents. It also features a high current gain, making it well-suited to high power applications. As the device is self-protected from ESD, it is suitable for use in applications where harsh environmental conditions may be present.

The PSMN013-100BS,118 is used for a variety of applications, including power management, signal conditioning, audio amplifiers, microcontroller-based projects, and embedded systems. It is used for DC/DC conversion, switching, and signal amplification. In addition, its low on-resistance and high current gain make it suitable for high power applications such as motor control and switching power supplies. The device is also used in a variety of consumer applications, such as cell phones and portable media players, where its low power consumption and low heat emissions are advantageous. By allowing the switching of high power loads, the PSMN013-100BS,118 can provide significant energy savings.

In summary, the PSMN013-100BS,118 is a single type FET device making it suitable for use in transistors and FETs applications. It is available in packages ranging from 0.3mm pitch to 2.6mm pitch and provides low on-resistance and excellent power dissipation, making it suitable for low voltage applications. It features a high current gain and very low capacitance for wide frequency response and is self-protected from ESD. The device has a wide range of applications, including power management and signal conditioning, and is also used in consumer products such as mobile phones and portable media players. It is a reliable and effective device, designed to provide excellent performance in a wide range of applications.

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