Allicdata Part #: | 1727-1129-2-ND |
Manufacturer Part#: |
PSMN013-100YSEX |
Price: | $ 0.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V LFPAK |
More Detail: | N-Channel 100V 82A (Tj) 238W (Tc) Surface Mount LF... |
DataSheet: | PSMN013-100YSEX Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.39188 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 238W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3775pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 82A (Tj) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PSMN013-100YSEX is a single-channel, enhancement-mode power field effect transistor (FET) designed for use with high-frequency DC to DC voltage conversion circuits. Its specific application field is to act as a direct connection to an inductor/capacitor circuit to allow indirect control of input voltage. In doing so, it assures low on-resistance DC-to-dc conversion and smooth transfer characteristics when used as a connecting point between the inductor and capacitor, a feature which makes the PSMN013-100YSEX widely used in high-end audio products for the management of power delivery.
The PSMN013-100YSEX is a type of metal oxide semiconductor field effect transistor (MOSFET) and is also known as a MOS power transistor. It is based on the same basic construction and operation as other FETs. A MOSFET is comprised of a number of thin layers, with an insulating silicon dioxide layer between a source (anode) and drain (cathode) of a semiconductor material. The main difference between a MOSFET and other FETs is that instead of controlling the current using a semiconductor material, the gate controls the intensity of the electric field which creates a current between the source and drain, allowing a very small voltage to switch a much larger current.
The PSMN013-100YSEX is a type of enhancement-mode MOSFET, meaning it has a positive threshold voltage. This means that the voltage necessary to turn it on is greater than 0V and that the gate needs to be biased to a more positive voltage before it will start conducting. As with all FETs, the gate of the PSMN013-100YSEX is also insulated from the channel and therefore has high input impedance, allowing it to remain unaffected by any signals connected to it.
When used in DC to DC voltage conversion circuits, the PSMN013-100YSEX acts as the connection by which an inductor and capacitor are independently connected. The use of the PSMN013-100YSEX ensures low on-resistance DC-to-dc conversion, providing smooth transfer characteristics and improved efficiency. This feature makes the PSMN013-100YSEX ideal for use in a wide range of high-end audio products for accurate power staging and delivery.
In addition, the PSMN013-100YSEX can also be used in a variety of other applications, such as switching Applications, current mirroring, voltage amplifiers, and low-speed switching. Its wide range of features, including low on-resistance DC-to-DC conversion, high input impedance, and its ability to be used as a connection by which to independently connect current sources, make the PSMN013-100YSEX ideal for a wide range of applications.
Overall, the PSMN013-100YSEX is a highly versatile and effective single-channel, enhancement-mode power field effect transistor designed for use in high-frequency DC-to-DC voltage conversion circuits. Its low on-resistance DC-to-DC conversion and smooth transfer characteristics are ideal for use in a wide range of high-end audio products and other applications, making it a highly sought after transistor.
The specific data is subject to PDF, and the above content is for reference
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