PSMN013-30YLC,115

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PSMN013-30YLC,115 is a type of single MOSFET transistor, or metal-oxide-semiconductor field-effect transistor. It is manufactured by NXP Semiconductors and is used for applications that require high efficiency, high-power density, and low on-resistance. MOSFETs are designed to control the flow of electric current between two terminals, and the PSMN013-30YLC,115 is no exception.

Application Fields & Working Principle

MOSFET transistors are commonly used in a variety of different applications, including switching power supplies, motor drives, LED illumination systems, and high-efficiency systems. The PSMN013-30YLC,115 is particularly suitable for switching operations with low on-resistance and low gate charge values. As such, it is ideal for applications that require high efficiency and low power loss.

The PSMN013-30YLC,115 has a gate-drain voltage of 30V and a drain current of 115A. It also has a gate threshold voltage of 2.5V, a maximum drain-source on-state resistance of 0.012Ω, and a minimum gate-source voltage of 3V. It has an isolation voltage of 650V and a continuous drain current of -75A to +115A. The PSMN013-30YLC,115 is packaged in a TO-220AB (4-pin) package.

The working principle of a MOSFET is based on the transistor principle. When a gate voltage is applied, the electric field caused by the gate voltage attracts carriers from the semiconductor material, allowing current to flow between the source and drain terminals. The more positive the gate voltage, the more current flows. This is useful as it allows precise control over current flow and power conversion. The PSMN013-30YLC,115 is designed to be used in applications that require an efficient, high-power device.

In terms of design considerations, the PSMN013-30YLC,115 can be used in both linear and switching applications. However, it is important to note that due to its low on-resistance, the device should be used in applications that require high speed and high efficiency. In addition, given its maximum drain-source on-state resistance value, it should be considered for applications that require low power loss. Further, for linear applications, the device should be used with appropriate safety measures due to its high isolation voltage.

Overall, the PSMN013-30YLC,115 is a suitable choice for applications that require high efficiency and low power loss. Its low on-resistance, high isolation voltage, low gate charge, and low threshold voltage make it a good option for designing high-performance systems. Additionally, its TO-220AB (4-pin) package makes it easy to integrate and use in various applications.

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