PSMN013-80YS,115 Allicdata Electronics
Allicdata Part #:

1727-4279-2-ND

Manufacturer Part#:

PSMN013-80YS,115

Price: $ 0.28
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 80V 60A LFPAK
More Detail: N-Channel 80V 60A (Tc) 106W (Tc) Surface Mount LFP...
DataSheet: PSMN013-80YS,115 datasheetPSMN013-80YS,115 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.25271
Stock 1000Can Ship Immediately
$ 0.28
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: SC-100, SOT-669, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 106W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The PSMN013-80YS,115 transistor, classified as a FET (Field Effect Transistor) and a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), is a single transistor designed for a variety of applications. It is designed for low frequency control of low voltage power output in applications such as solar cells, switching circuits and radio controls.The PSMN013-80YS,115 is composed of an insulated gate region, an N-channel, and an N-type semiconductor. The insulated gate region is composed of both a P-type and an N-type region, while the N-channel contains an N-type material. The N-channel and the N-type semiconductor together form a planar arrangement.The principal purpose of the PSMN013-80YS,115 is for the switching of small amounts of electric current. It can be used in a variety of circuits, including switching circuits and radio controls, Y-connectors, and matrix switching. It is ideal for circuits that require the control of a light or low voltage load, such as those used in solar cells or LED systems.The PSMN013-80YS,115 transistor works by allowing current to flow through the N-channel, while preventing current from flowing through the insulated gate region. This is accomplished by applying a voltage to the insulated gate region, which causes a change in its electrical properties. This change in electrical properties results in a gate threshold voltage, which stops current from flowing through the N-channel. This gate voltage can be adjusted according to the amount of current that needs to be switched.The PSMN013-80YS,115 transistor is highly reliable and efficient, and its small size makes it ideal for a wide range of applications. It is also extremely easy to use, as it only requires a few electrical connections to be made. It is also capable of controlling large amounts of power, making it ideal for applications that require a high degree of accuracy, such as solar cells, switching circuits, and radio controls.Overall, the PSMN013-80YS,115 is an excellent choice for those looking for a reliable, efficient, and easy to use transistor for a wide variety of applications. It is highly reliable, efficient, and easy to use, and its small size makes it suitable for a wide range of applications. It is able to control a variety of power outputs, making it suitable for both low and high voltage applications. It is also capable of controlling a large amount of power, making it particularly suited for applications that require a high level of accuracy.The specific data is subject to PDF, and the above content is for reference

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