PSMN018-100PSFQ

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PSMN018-100PSFQ is a single n-channel enhancement mode power MOSFET (metal-oxide-semiconductor field-effect transistor) product. This product is designed using an advanced structural technology and an optimized process, and has excellent performance. With a low on-state resistance, it can provide greater current capacity.

The MOSFET is a four-terminal device with a gate, a source, a drain, and a body. Its main function is to control the current flow between the drain and the source. When the gate voltage of MOSFET is low and is under the threshold voltage, the input current will cause no drain current, and the MOSFET is turned off. When the gate voltage is higher than the threshold voltage, the drain-source current is mainly determined by the channel of the MOSFET. With the increase of gate voltage, the conduction channel becomes wider, and the current flow between the drain and the source increase.

PSMN018-100PSFQ application fields include general purpose, analog and power switching applications. It is widely used because of its impressive performance benefits such as low on state resistance, low threshold voltage and fast switching speed. It is suitable for high side and low side switching applications. PSMN018-100PSFQ can be used in industries such as aero and defense, elevators, renewable energy, industrial applications, motor drivers, mobile phones and many more. For example, it can be used as a switch for motors, a switch for photovoltaic systems, and a switch for aero and defense systems.

Another application field for the PSMN018-100PSFQ is power switching. Due to its small size and robust performance, it can be used to make power switches, which can switch high power at very low loss. It is mainly used in switching power supply to control its power supply input, as well as controlling power output with minimal losses. It can also be used to control the supply of power in high performance radio equipment, such as analog electronic circuits. For example, its low on-state resistance makes it ideal for MOSFET circuits for controlling the speed of motors, such as in modern washing machines.

The working principle of PSMN018-100PSFQ is based on its four-terminal construction. The source feeds the current into the device while the drain receives the current. The body is connected between the source and the drain. The gate is used to control the operation of the device by applying a voltage across it. The voltage action creates a three-dimensional field effect in the silicon material that forms the channel between the source and the drain. This field effect causes the channel to be wider or narrower, allowing more or less current to flow between the source and the drain.

When the gate voltage is low, no channel will be formed between the source and the drain, resulting in no current flow. The maximum current will flow when the gate voltage reaches the gate threshold voltage, at which point the channel between the source and the drain is fully open. By controlling the voltage applied to the gate, current flow between the source and the drain can be controlled.

In conclusion, PSMN018-100PSFQ is a single n-channel enhancement mode power MOSFET product designed using advance structural technologies and optimized process. It has excellent performance and can be used for general purpose, analog and power switching applications. Its four-terminal construction and voltage action enable it to control the current flow between the source and the drain. With its low on-state resistance and fast switching speed, PSMN018-100PSFQ is the ideal device for high power, low loss power switching applications.

The specific data is subject to PDF, and the above content is for reference