Allicdata Part #: | 1727-2593-2-ND |
Manufacturer Part#: |
PSMN021-100YLX |
Price: | $ 0.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V LFPAK56 |
More Detail: | N-Channel 100V 49A (Tc) 147W (Tc) Surface Mount LF... |
DataSheet: | PSMN021-100YLX Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.24108 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 147W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4640pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 65.6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 21.5 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 49A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PSMN021-100YLX is a metal-oxide-semiconductor field-effect transistor (MOSFET) that can be used in low to medium current switching and/or amplifying applications. The MOSFET is a three terminal device with a gate, drain and source, that controls the flow of electrons depending on the applied gate-to-source voltage (VGS). The PSMN021-100YLX MOSFET is a feature of N-Channel Enhancement Mode, with a breakdown voltage of 100V, and a continuous drain current of 21A.
The working principle of a MOSFET is based on its capacitive input offered by a gate electrode which is separated from its semiconducting body by a thin layer of insulation. This layer of insulation gives rise to the field-effect nature of the MOSFET—the size of the source-to-drain current is determined by the voltage applied to the gate. Although the current does not flow through the insulation, the electric field generated by the applied voltage allows the flow of electrons between source and drain.
The MOSFET acts as a switch in which the on/off states of the channel between the source and drain electrodes is determined by the gate voltage. A voltage applied to the gate will either positively or negatively affect the amount of current flowing out of the source, depending on the type of device. In the case of the PSMN021-100YLX, the MOSFET is in the enhancement mode—which means that the channel is off until a positive voltage is applied to the gate, allowing current to pass out of the source and travel along the channel.
Although the MOSFET can be used as both a switch and an amplifier, it is generally more effective if used as a switch. That is because, in this mode, the on/off state of the source-to-drain channel is determined by the applied voltage, which makes them highly efficient. Furthermore, the MOSFET’s sensitivity enables it to act as a variable resistor, allowing the resistance to be adjusted depending on the applied voltage.
The PSMN021-100YLX MOSFET is most commonly used in power applications, where it can be used to control the flow of current in a circuit. It is particularly effective for controlling the flow of high voltages, such as in motor control, power supplies and AC/DC converters. It can also be used as a linear amplifier, with low distortion and high efficiency, in applications such as audio, video, and communication systems.
In conclusion, the PSMN021-100YLX MOSFET is a highly versatile device that is suitable for use in a wide range of low to medium current switching and/or amplifying applications. Its principal working principle is based on the application of a gate-to-source voltage that is used to adjust the source-to-drain current. The MOSFET is most commonly used in power applications, but can also be used as a linear amplifier in audio, video, and communication systems.
The specific data is subject to PDF, and the above content is for reference
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