PSMN025-100D,118

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The PSMN025-100D,118 is a single N-channel enhancement mode field effect transistor from Bosch hese types of transistors are typically used in a variety of applications, including power switching, motor control, and signal amplification. It is a FET (Field Effect Transistor) with an N-type drain-to-source channel and a voltage-controlled gate terminal. This transistor features a dielectric breakdown voltage of 25V and a maximum drain current of 100A.

This particular FET is suitable for a range of power applications, as it can handle relatively high drain-source voltages and drain currents. It is also capable of working with moderate gate drive voltages, and is suitable for operating in Class-D amplifier topologies.

The working principle of the PSMN025-100D,118 is simple. When the gate voltage is below a certain level (the pinch-off voltage), the N-type channel between the drain and source is effectively non-conductive. However, when the gate voltage is increased above this level, the channel between the drain and source becomes conductive, allowing the current to flow through it.

The transistor also has several important characteristics which enable it to be used in various applications. For example, it has an ON-resistance of approximately 1.2mOhms, which allows it to switch high current levels with minimal losses. Furthermore, its low gate threshold voltage also ensures low power consumption when the device is in operation.

Finally, the device is offered in an industry-standard 8-pin surface mount package, which allows for easy installation on a variety of printed circuit boards. This makes it a highly versatile device for numerous applications.

In conclusion, the PSMN025-100D,118 is a single N-channel enhancement mode Field Effect Transistor from Bosch. It is suitable for a range of power applications, as it offers high drain-source voltages, high current levels, low gate threshold voltage, and industry-standard 8-pin surface mount packaging. The working principle of the device is based on increasing the gate voltage above a certain level to make the N-type channel between the drain and source conductive, thus allowing current to flow through it. These features make this FET a popular choice for a variety of applications.

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