PSMN040-100MSEX

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	SOT-1210, 8-LFPAK33 (5-Lead)
Supplier Device Package:	LFPAK33
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	91W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1470pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	36.6 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	30A (Tj)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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PSMN040-100MSEX: Application Field and Working Principle

The PSMN040-100MSEX is a N-channel enhancement mode MOSFET made by NXP for use in digital applications. It is designed for a wide range of automotive, industrial, consumer, and consumer electronics requirements, such as motor control, HVAC and heating, lighting, consumer and consumer devices, mobile devices, and more. This MOSFET is a single, symmetrical device that features good thermal and mechanical properties, making it ideal for a range of applications.

Application Field

The PSMN040-100MSEX is suitable for use in a range of automotive, industrial, consumer and consumer electronics electronics applications. It is designed for use as a motor control, HVAC and heating, lighting, consumer and consumer device, mobile device and similar applications. It is a high-current, high-powered MOSFET, and is suitable for driving a range of inductive, resistive and capacitive loads. It can be used for a wide range of switching applications, including relays, solenoids, valves, and much more.

Working Principle

The PSMN040-100MSEX is a N-channel enhancement mode MOSFET, meaning it is typically used in applications where the source voltage is higher than the gate voltage. In operation, the MOSFET will be driven in a closed-loop switching configuration, to ensure reliable operation and fast switching. When the gate voltage is low relative to the source voltage, the MOSFET will be opened, allowing current flow. When the gate voltage is higher than the source voltage, the MOSFET will be closed and no current will flow.The MOSFET features a low on-state resistance, which reduces energy losses. This also helps to reduce the amount of heat that is produced, which is beneficial in thermal-sensitive applications. It also features a low input capacitance, which helps reduce signal delays and provide faster switching.

Conclusion

The PSMN040-100MSEX is a N-channel enhancement type MOSFET designed for use in a wide range of automotive, industrial, consumer, and consumer electronics applications. It is a single, symmetrical device that offers good thermal and mechanical properties, and is suitable for driving a range of inductive, resistive and capacitive loads. Additionally, it features a low on-state resistance and low input capacitance, which helps reduce energy losses and signal latency.

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