PSMN1R0-25YLDX Allicdata Electronics
Allicdata Part #:

1727-2495-2-ND

Manufacturer Part#:

PSMN1R0-25YLDX

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: PSMN1R0-25YLD/LFPAK/REEL 7 Q1
More Detail: N-Channel 25V 100A (Tc) 160W (Tc) Surface Mount LF...
DataSheet: PSMN1R0-25YLDX datasheetPSMN1R0-25YLDX Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Package / Case: SC-100, SOT-669, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 160W (Tc)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 5308pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 71.8nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 0.89 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The PSMN1R0-25YLDX is a single power MOSFET transistor, which is used in a wide range of applications. It is a type of switching transistor, which can be used to create an electrical signal from a small current. It is designed to be used in a high-side configuration, and is a good choice for applications which require current levels between 1.25A and 25A.

The PSMN1R0-25YLDX is an N-channel, 14V Drain-Source voltage (Vds) transistor. It is a small signal device, meaning that it is capable of handling relatively small current and/or small voltages. The total gate charge is 11nC, meaning that it can handle relatively high gate capacitances. It is also capable of operating with fast switching speeds, reaching a “turn on” time of 5.4ns and a “turn off” time of 2.3ns.

The PSMN1R0-25YLDX is designed to be used in a wide variety of applications, such as motor control, power supplies, load switching, and motor safety. It is highly reliable and is designed for use in both high-temperature and high-voltage environments. In addition, it can be used in a wide range of circuits, such as low-power, medium-power, and high-power applications. It is also capable of controlling both inductive and capacitive loads.

The working principle of the PSMN1R0-25YLDX is simple yet effective. When an electrical signal is applied to the gate of the transistor, it opens up the channel between the source and the drain, allowing current to flow. When the gate voltage is removed, the channel closes and the current flow is stopped. This switching behavior makes the transistor ideal for use in high-side configurations, as it is able to easily switch on and off.

The PSMN1R0-25YLDX is a highly useful transistor, which can be used in a wide range of applications. It is capable of withstanding a wide range of conditions, and is designed for use with high-power applications. It is well-suited to applications which require fast switching speeds and a high level of reliability.

The specific data is subject to PDF, and the above content is for reference

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