Allicdata Part #: | 1727-1860-2-ND |
Manufacturer Part#: |
PSMN1R2-30YLDX |
Price: | $ 0.42 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 300A 56LFPAK |
More Detail: | N-Channel 30V 100A (Tc) 194W (Tc) Surface Mount LF... |
DataSheet: | PSMN1R2-30YLDX Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.38514 |
Vgs(th) (Max) @ Id: | 2.2V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 194W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4616pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.24 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PSMN1R2-30YLDX is a Single N-Channel Enhancement Mode Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from NXP Semiconductors. It is one of the most common and popular MOSFETs for its high-performance and cost-effective advantages. It is available in a D-PAK (TO-252) package, with a maximum on-state drain-source resistance of 1.2 Ohm, maximum continuous drain current of 30 Amps, and a maximum drain-source voltage of 30V.
The PSMN1R2-30YLDX is specifically designed for use in DC-DC converters, switching regulators and other DC power stages in various industrial, automotive, communications and other applications. Some typical applications include DC-DC converters, DC to AC inverters, switching regulators and DC motor control/drive circuits. The device features high-speed switching, low gate charge and low on-state resistance.
The working principle of the PSMN1R2-30YLDX is based on the use of the depletion-mode MOSFET. This type of MOSFET uses an insulated gate electrode to control the flow of current between the drain and the source of the MOSFET device. When the gate voltage is applied, the electrons on the semiconductor gate create a potential barrier. As the gate voltage increases, the potential barrier reduces and allows more electrons to flow through the gate and from the source to the drain, thus creating a current in the output circuit.
This type of MOSFET is particularly useful in applications where low on-state resistance and fast switching are required, such as in switching regulators and DC-DC converters. The low on-state resistance means the device can handle higher current loads with less voltage drop, while the fast switching helps to reduce power dissipation and increase efficiency. The main advantages of the PSMN1R2-30YLDX is its ability to deliver high power conversion efficiency, high switching speed and low power dissipation.
The PSMN1R2-30YLDX is an excellent choice for high-efficiency, high-power applications, due to its flexibility and cost effectiveness. With its low on-state resistance and fast switching, it is suitable for a variety of power applications, making it a popular choice for applications such as DC-DC converters, DC to AC inverters, switching regulators and DC motor control/drive circuits.
The specific data is subject to PDF, and the above content is for reference
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