PSMN1R5-30YLC,115 Allicdata Electronics
Allicdata Part #:

1727-5297-2-ND

Manufacturer Part#:

PSMN1R5-30YLC,115

Price: $ 0.30
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 30V 100A LFPAK
More Detail: N-Channel 30V 100A (Tc) 179W (Tc) Surface Mount LF...
DataSheet: PSMN1R5-30YLC,115 datasheetPSMN1R5-30YLC,115 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.27821
Stock 1000Can Ship Immediately
$ 0.3
Specifications
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Package / Case: SC-100, SOT-669, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 179W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4044pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.55 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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PSMN1R5-30YLC,115 is a single N-Channel MOSFET. This type of MOSFET is designed to be used in various applications, ranging from low-power to high-power switching and even power conversion. It is ideal for use in battery chargers, motor controls and other similar systems.

A MOSFET is a type of Field-Effect Transistor (FET). It is an electronic device that consists of a channel of semiconductor material between two terminals. A voltage applied to one pair of terminals controls the current through the other pair. This makes the MOSFET an ideal device for switching in many high-power applications.

There are two types of MOSFETs; one is an enhancement type and the other is a depletion type. The PSMN1R5-30YLC,115 is an enhancement MOSFET. This device is designed for both low-side and high-side driving. It has a high breakdown voltage, high drain-source withstand voltage, and low on-resistance. As a result, it is suitable for use in a variety of applications, including motor control, power conversion and switching applications.

The working principle of the MOSFET is based on the physics of semiconductor materials. When a voltage is applied across a semiconductor material, the electrons move freely in the material, creating a current. The current in turn creates a voltage across the material, creating a current-voltage relationship. In a MOSFET, this relationship is used to control the flow of current through the device. The MOSFET has two modes of operation; an enhanced on-state and an off-state.

In the on-state, the channel is enabled and the current can freely flow from the drain to the source. The drain-source voltage is determined by the gate voltage, which can be adjusted to control the amount of current. In the off-state, the MOSFET is disabled and the current is not allowed to flow from the drain to the source. In this mode, the drain-source voltage is determined by the supply voltage.

The PSMN1R5-30YLC,115 is a single N-Channel MOSFET designed for use in a variety of applications. It has a high breakdown voltage, high-drain-source withstand voltage, and low on-resistance. This makes it suitable for use in low-power and high-power switching, motor control, and power conversion applications. Furthermore, it is relatively easy to use and it is available in a variety of packages, which makes it ideal for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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