![PSMN1R5-30YLC,115 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | 1727-5297-2-ND |
Manufacturer Part#: |
PSMN1R5-30YLC,115 |
Price: | $ 0.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 100A LFPAK |
More Detail: | N-Channel 30V 100A (Tc) 179W (Tc) Surface Mount LF... |
DataSheet: | ![]() |
Quantity: | 1000 |
1500 +: | $ 0.27821 |
Vgs(th) (Max) @ Id: | 1.95V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 179W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4044pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.55 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PSMN1R5-30YLC,115 is a single N-Channel MOSFET. This type of MOSFET is designed to be used in various applications, ranging from low-power to high-power switching and even power conversion. It is ideal for use in battery chargers, motor controls and other similar systems.
A MOSFET is a type of Field-Effect Transistor (FET). It is an electronic device that consists of a channel of semiconductor material between two terminals. A voltage applied to one pair of terminals controls the current through the other pair. This makes the MOSFET an ideal device for switching in many high-power applications.
There are two types of MOSFETs; one is an enhancement type and the other is a depletion type. The PSMN1R5-30YLC,115 is an enhancement MOSFET. This device is designed for both low-side and high-side driving. It has a high breakdown voltage, high drain-source withstand voltage, and low on-resistance. As a result, it is suitable for use in a variety of applications, including motor control, power conversion and switching applications.
The working principle of the MOSFET is based on the physics of semiconductor materials. When a voltage is applied across a semiconductor material, the electrons move freely in the material, creating a current. The current in turn creates a voltage across the material, creating a current-voltage relationship. In a MOSFET, this relationship is used to control the flow of current through the device. The MOSFET has two modes of operation; an enhanced on-state and an off-state.
In the on-state, the channel is enabled and the current can freely flow from the drain to the source. The drain-source voltage is determined by the gate voltage, which can be adjusted to control the amount of current. In the off-state, the MOSFET is disabled and the current is not allowed to flow from the drain to the source. In this mode, the drain-source voltage is determined by the supply voltage.
The PSMN1R5-30YLC,115 is a single N-Channel MOSFET designed for use in a variety of applications. It has a high breakdown voltage, high-drain-source withstand voltage, and low on-resistance. This makes it suitable for use in low-power and high-power switching, motor control, and power conversion applications. Furthermore, it is relatively easy to use and it is available in a variety of packages, which makes it ideal for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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