PSMN1R6-30MLHX

Gate Charge (Qg) (Max) @ Vgs:	41nC @ 10V
Package / Case:	SOT-1210, 8-LFPAK33 (5-Lead)
Supplier Device Package:	LFPAK33
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	106W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2.369nF @ 15V
Vgs (Max):	±20V
Series:	--
Vgs(th) (Max) @ Id:	2.2V @ 1mA
Rds On (Max) @ Id, Vgs:	1.9 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	160A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active

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Introduction

The PSMN1R6-30MLHX is a field-effect transistor that is a single MOSFET in a TO-220 package. The device is designed for a variety of applications, including power supply regulation, switching and amplifying applications. It is a popular component for the design of discrete circuits, and it offers a wide range of features to the designer. In this article, we will discuss the application fields of the PSMN1R6-30MLHX and its working principle.

Application Fields

The PSMN1R6-30MLHX is a versatile component that can be used in a variety of application areas. In motors and power supplies, the component is used for gate driving and power control. Its low on-state resistance (RDS(on)) ensures minimal conduction losses and maximum switching speeds. The transistor can also be used in mobile phone applications, such as amplifiers, antenna switches and power management circuits. Additionally, the component is used in audio amplifier circuits and low-noise amplifiers (LNAs). In fact, its low thermal resistance makes it a good choice for heat management applications.

Working Principle

The PSMN1R6-30MLHX is a static switch, meaning that it does not require any active circuit components to operate. The operation of the MOSFET is based on a voltage-controlled gating mechanism. When a positive gate-source voltage (VGS) is applied, the gate-source junction is forward-biased, causing a flow of electrons from the gate to the source. This generates an electric field that attracts holes from the channel to the source, thus reducing the resistance of the channel as electrons can now freely flow from the drain to the source.The device is further characterized by its threshold voltage (Vth). This is the voltage required to turn the MOSFET “on”, i.e. establish the low resistance state. The PSMN1R6-30MLHX has a threshold voltage of -3V, which is relatively low, making the device suitable for a wide range of gate-source voltages.

Conclusion

The PSMN1R6-30MLHX is a versatile, single MOSFET transistors designed for a range of applications. Its low-on-state resistance and low threshold voltage enable it to be used in motors and power supplies, mobile phone applications, audio amplifiers and low-noise amplifiers. Its operation is based on a voltage-controlled gating mechanism, which is triggered when a positive gate-source voltage is applied. With its wide range of features, the PSMN1R6-30MLHX is an ideal choice for your circuit designs.

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