PSMN1R8-40YLC,115

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PSMN1R8-40YLC,115 is a type of transistor, specifically a power MOSFET. It falls into the FETs, MOSFETs – Single category, and consists of a small 4mm square package – which is the short-form version of the full name. This MOSFET is specifically designed for operating at higher temperature levels and will make an ideal choice for power switching, where a higher than normal operating temperature is expected.

The device is rated at 8A RDS(on) at 40V and comes in an N-channel configuration. It has a low threshold voltage of 0.7V which ensures a very fast switching time from drain to source.

The device has a low gate-threshold voltage of 4V, making it suitable for driving high power loads. It has a drain-source breakdown voltage of 115V, making it suitable for a variety of applications in both switching and amplifying. The low capacitance gate-drain capacitance of 1.1pF and gate-source capacitance of 0.3pF make it suitable for high frequency switching applications.

In terms of applications, the PSMN1R8-40YLC,115 could be used in DC/DC converters, SMPS, high frequency drives, and motor control applications. The low gate voltage and low RDS(on) make it ideal for power switching applications. It has a low threshold voltage and high current rating, making it suitable for high current devices such as motor drivers, relay drivers and high current switches.

The working principle of the PSMN1R8-40YLC,115 is based on the underlying principles of the MOSFET. This MOSFET works on the basic principle of majority carriers - electrons. When a voltage is applied to the gate of the device, it creates a field of electrons which accumulate on the positively charged gate. This accumulation of majority carriers results in a decrease in the resistance between the Drain and Source terminals, which is the basic function of MOSFETs.

The device can be used both in off-to-on and on-to-off switching modes. When the device is used in the off-to-on mode, the gate voltage needs to increase above the threshold voltage, which is the voltage at which the drain-source resistance decreases and allows current to flow. When the device is used in the on-to-off mode, the gate voltage needs to be reduced below the threshold voltage, which is the voltage at which the drain-source resistance increases and prevents current from flowing.

The device has an operating temperature range of -40°C to 150°C, making it suitable for applications that are exposed to extreme environmental conditions. The PSMN1R8-40YLC,115 is a reliable and efficient choice for power switching applications due to its high current rating and low threshold voltage. The low capacitance gate-drain capacitance and gate-source capacitance make it suitable for high frequency switching applications.

The specific data is subject to PDF, and the above content is for reference