Allicdata Part #: | 1727-2501-2-ND |
Manufacturer Part#: |
PSMN2R0-25MLDX |
Price: | $ 0.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | PSMN2R0-25MLD/MLFPAK/REEL 7 Q |
More Detail: | N-Channel 25V 70A (Tc) 74W (Tc) Surface Mount LFPA... |
DataSheet: | PSMN2R0-25MLDX Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.24621 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.27 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 34.4nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2490pF @ 12V |
FET Feature: | Schottky Diode (Body) |
Power Dissipation (Max): | 74W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | LFPAK33 |
Package / Case: | SOT-1210, 8-LFPAK33 (5-Lead) |
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PSMN2R0-25MLDX is a single N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) manufactured by NXP Semiconductors. It is used in a variety of applications, ranging from low power digital switching to high-voltage power switching.
Application Field
The PSMN2R0-25MLDX can be used in a wide variety of applications including:
- DC-to-DC power supply ZVS topologies
- High-efficiency power switching applications
- Low power motor control
- Level shifting
- Motor control and switching
- Gate protection
- Radio-frequency switching
- High-speed switching
- High-voltage circuits
Working Principle
The PSMN2R0-25MLDX is a Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). It is composed of a source, drain and gate electrode. The source electrode is connected to a positive voltage source and the drain is connected to a negative voltage source. The gate electrode is connected to a gate control voltage. When a current is flowing between the source and drain electrodes, the gate control voltage can be used to control the amount of current passing through the MOSFET.
The PSMN2R0-25MLDX is an N-channel MOSFET, which means more current can be passed through the MOSFET when the gate voltage is positive. When the gate voltage is negative, the MOSFET will be off, and no current will be allowed to pass through.
The PSMN2R0-25MLDX also has an extended drain to source breakdown voltage (BVds) of 25V. This means the MOSFET can handle very high voltages, up to 25V. It is well suited for high voltage applications such as AC-DC converters, inverters, motor control and switching.
In addition, the PSMN2R0-25MLDX is a low on-resistance (Rds) MOSFET. This means it can pass more current with lower power losses. This makes it an ideal choice for power switching applications where efficiency is critical.
The PSMN2R0-25MLDX is a very versatile MOSFET and can be used in a variety of applications. It is especially well suited for high-efficiency power switching, low power motor control and high-voltage circuits.
The specific data is subject to PDF, and the above content is for reference
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