Allicdata Part #: | 1727-2498-2-ND |
Manufacturer Part#: |
PSMN2R0-25YLDX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | PSMN2R0-25YLD/LFPAK/REEL 7 Q1 |
More Detail: | N-Channel 25V 100A (Tc) 115W (Tc) Surface Mount L... |
DataSheet: | PSMN2R0-25YLDX Datasheet/PDF |
Quantity: | 4500 |
Vgs(th) (Max) @ Id: | 2.2V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 115W (Tc) |
FET Feature: | Schottky Diode (Body) |
Input Capacitance (Ciss) (Max) @ Vds: | 2485pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 34.1nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.09 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PSMN2R0-25YLDX is a power MOSFET, which is part of a series of low voltage transistor devices from NXP semiconductors. This specific device is a P-channel enhancement mode MOSFET, meaning it can be used to provide an enhancement of the signal, or inverting of the signal, in order to switch off or on the current or voltage. It has a drain-source current of up to 25A, a drain-source breakdown voltage of 20V and an on-resistance of 2.7 mΩ with a gate voltage of 4.5V and ±20V.
The PSMN2R0-25YLDX is primarily used in motor applications, where bipolar devices may struggle with necessity of using high currents. Being able to handle up to 25A, the MOSFET is well suited to this kind of application. It is also used in other non-motor applications, such as in audio amplifiers and in switching power supplies, where it can be seen to provide a more efficient and more reliable solution. It is also seen being used in battery management and instrumentation applications.
The working principle of the PSMN2R0-25YLDX is quite simple. It relies on the P-channel enhancement MOSFET structure, which is formed from three PN junctions. The source of the device is connected to ground and is then connected to the three N-channel enhancement MOSFET gates. The gate is then connected to a control voltage, which will determine whether the device is on or off. When the control voltage is negative, the gate will be switched off, blocking the current between the source and drain and preventing the flow of current. When the control voltage is positive, the gate switches on, allowing the current to flow through the device.
The PSMN2R0-25YLDX is a versatile and reliable device, capable of providing high current handling capabilities while also being able to switch very quickly. It is robust enough to withstand high power applications, and its low on-resistance ensures that losses are kept to a minimum. Its wide operating temperature range helps to ensure reliability and consistent performance in all kinds of environments, from industrial to consumer applications.
The specific data is subject to PDF, and the above content is for reference
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