PSMN2R0-30YLDX

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The PSMN2R0-30YLDX is a N-channel Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed to be used in a variety of low-power applications. It is a single transistor and features a low on-resistance and is highly efficient, making it ideal for applications that require low-voltage but high current.

The PSMN2R0-30YLDX is based on the power MOSFET principle, which uses a metal oxide semiconductor (MOS) to form the gate around a field effect transistor. The device works by controlling the flow of electrons through a gate, which is created by applying voltage to the gate terminal. When the gate voltage is increased, an electric field is created, allowing more electrons to flow. When the gate voltage is decreased, an electric field is created, which prevents electrons from flowing.

The PSMN2R0-30YLDX is capable of handling up to 30 Amperes of continuous current and can support peak currents up to 60 Amperes without exceeding the rated voltage. It has an avalanche breakdown voltage of 110 volts and a reverse-recovery time of 15 nano-seconds. It is designed to offer low on-resistance, with a typical on-resistance rating of 0.37 Ohms.

The PSMN2R0-30YLDX is suitable for a range of low-power applications, including DC-DC converters, motor speed controllers, switching regulators and power supplies. It can also be used in applications requiring high frequency switching such as Plasma Displays and Flat Panel Displays. It is designed to offer a highly efficient solution for these applications, with a low on-resistance and fast recovery times.

The PSMN2R0-30YLDX is an effective and efficient solution for a variety of low-power applications. Its low on-resistance, high-current handling capability, fast recovery time and high avalanche breakdown voltage make it a suitable choice for applications such as DC-DC converters, motor speed controllers, switching regulators and power supplies.

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