PSMN2R2-30YLC,115 Allicdata Electronics
Allicdata Part #:

1727-5298-2-ND

Manufacturer Part#:

PSMN2R2-30YLC,115

Price: $ 0.32
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 30V 100A LFPAK
More Detail: N-Channel 30V 100A (Tc) 141W (Tc) Surface Mount LF...
DataSheet: PSMN2R2-30YLC,115 datasheetPSMN2R2-30YLC,115 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.28818
Stock 1000Can Ship Immediately
$ 0.32
Specifications
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Package / Case: SC-100, SOT-669, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 141W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3310pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.15 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The PSMN2R2-30YLC,115 is a n-channel logic-level MOSFET (metal-oxide-semiconductor field-effect transistor) created by NXP Semiconductors. It is one of the earliest types of MOSFET available in the world today and is made from a single-transistor design. As a logic-level device, it is a transistor that has been designed to operate at lower voltages than other MOSFETs and is used in many different applications. This article will discuss the application field and working principle of the PSMN2R2-30YLC,115.

The PSMN2R2-30YLC,115 can be used in a wide range of applications, such as in audio power amplifiers and switching power supplies. It is a low-power device, which makes it well-suited for applications that require low energy consumption. It can also be used in automotive applications and portable electronics like smartphones and laptops, where it is often used to regulate power management and reduce power consumption. It is also useful for controlling non-linear loads, such as variable-speed motor drives and industrial automation equipment. This MOSFET is also well suited for use in digital logic circuits, logic gates, PLL oscillators, and digital signalprocessing circuits.

The PSMN2R2-30YLC,115 uses a single-transistor design to get its low on-resistance and low-voltage operation. A single n-channel is created by connecting the drain and the source of the transistor. By applying a voltage to the gate of the device, the potential difference between the drain and the source is controlled. As a result, the current flow can be adjusted. This control enables the device to be used to regulate power consumption, as well as to switch power. The device also has an integrated ESD (electrostatic discharge) protection that greatly increases the safety of the device.

The PSMN2R2-30YLC,115 is an incredibly versatile and powerful MOSFET due to its single-transistor design and low-voltage/high-current operation. It can be used in a wide range of applications, from controlling non-linear loads to regulating power consumption in audio power amplifiers and switching power supplies. Additionally, its integrated ESD protection increases the safety of the device and makes it well-suited for use in automotive and portable electronics.

The specific data is subject to PDF, and the above content is for reference

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