![PSMN4R0-25YLC,115 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
PSMN4R0-25YLC,115 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-5303-2-ND |
Manufacturer Part#: |
PSMN4R0-25YLC,115 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 25V 84A LFPAK |
More Detail: | N-Channel 25V 84A (Tc) 61W (Tc) Surface Mount LFPA... |
DataSheet: | ![]() |
Quantity: | 1000 |
1500 +: | $ 0.19359 |
Vgs(th) (Max) @ Id: | 1.95V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 61W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1407pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22.8nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 84A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PSMN4R0-25YLC,115 is a single level, MOSFET (metal-oxide-semiconductor field-effect transistor), a type of FET (field-effect transistor). Field-effect transistors are special transistors used for signal processing and for controlling and driving current. They are often used as switches and are widely used in the field of electronics.
The PSMN4R0-25YLC,115 is a n-type transistor and is effective when controlling a large baseline current, with a low input voltage. This makes it highly efficient for use in circuits which require large current. The power handling capability and low on-resistance of these transistors also make them popular to use throughout a variety of applications.
The enhancements in the PSMN4R0-25YLC,115 MOSFETs compared to other MOSFETs are its reduced oscillation during switching, higher drain-source breakdown voltage, and improved gate oxide reliability. These improvements make the device more efficient and are especially useful in applications such as power supplies, motor control, and other power electronics applications.
The primary application of these transistors is in power switching and motor control. They can be used to control the current based on the input voltage, and can also switch large currents without the need for additional components. Additionally, the PSMN4R0-25YLC,115 MOSFETs are ideal for use in solid-state relay circuits, as well as various other applications requiring a low conservatively rated power dissipation.
The working principle of MOSFETs is quite simple. When a voltage is applied to the gate electrodes, it causes a current to flow between the drain and source electrodes. This current is called the drain current, and it’s determined by the applied voltage, the drain voltage, and the current through the gate-source junction. The gate current has a very small but measurable effect on the drain current and is used to control its flow.
In conclusion, the PSMN4R0-25YLC,115 MOSFET is a single-level, n-type transistor that is ideal for controlling large baseline current, with low input voltage. It is widely used in power switching and motor control applications, as well as for controlling current in circuits requiring high efficiency. It also has superior operating characteristics compared to other MOSFETs, making it the ideal choice for many high-power industrial applications.
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