PSMN4R1-30YLC,115

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The PSMN4R1-30YLC,115 is a single series of N-Channel 30V mid-voltage, surface mount, logic level field effect transistor (FET) with an RDS(On) of only 4.1mΩ. It is specially designed to minimize power losses in switching and amplifier applications. This series of FETs features ultra-low gate charge with high current handling capability and fast switching speed. Additionally, the PSMN4R1-30YLC,115 is lead-free compliant, with RoHS and REACH certifications.

A FET is a three-terminal semiconductor device in which current flowing between two contacts is controlled by a voltage applied to the third contact. These devices are used as electronic switches, amplifiers and as logic elements, and are made from one type of semiconductor material, making them more stable and reliable than traditional transistors. The PSMN4R1-30YLC,115 is an N-Channel FET, which employs the minority carriers of electrons as the controlling polarity. This characteristic allows for a lower ON resistance, making it a highly efficient device for switching applications.

Generally, FET devices operate by allowing the flow of charge across multiple channels created through the depletion layer of the semiconductor material. The source of the current is the source (S) terminal, and the drain (D) is the terminal where the current is drained. Depending on the current gate-to-source voltage (VGS), electrons can travel through the channel between the source and the drain, allowing current to pass. The threshold voltage (VGS) determines whether the transistor is in cutoff or saturation mode, and by applying a positive gate voltage to the gate (G) terminal, this FET is turned ON.

In the PSMN4R1-30YLC,115, the low RDS(on) makes it particularly suited for converters and motor drive applications. It provides extremely low gate charge for fast switching applications, and increased current handling capabilities for higher performance. This FET is also the ideal choice for amplifier applications, since its low gate charge provides for a low resistance path for the signal and its low reverse transfer capacitance allows for a better linearity when operating in high slewing rate. Additionally, the device offers higher breakdown voltage and improved thermal resistance for enhanced reliability.

In sum, the PSMN4R1-30YLC,115 is an highly efficient N-Channel FET that is suitable for power supply, automotive, high-side load switch, amplifier and switching applications. It features a low RDS(on) that ensures lower conduction losses, a low gate charge for faster switching, and high current handling capability for increased performance. All these qualities make the PSMN4R1-30YLC,115 an ideal choice for applications that require high efficiency, low conduction losses and low gate charge.

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