Allicdata Part #: | 1727-6499-ND |
Manufacturer Part#: |
PSMN4R3-100PS,127 |
Price: | $ 2.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V 120A TO220AB |
More Detail: | N-Channel 100V 120A (Tc) 338W (Tc) Through Hole TO... |
DataSheet: | PSMN4R3-100PS,127 Datasheet/PDF |
Quantity: | 9866 |
1 +: | $ 2.02230 |
10 +: | $ 1.82574 |
100 +: | $ 1.46714 |
500 +: | $ 1.14109 |
1000 +: | $ 0.94547 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 338W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9900pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.3 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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PSMN4R3-100PS,127 is a single P-channel enhancement-mode MOSFET, and is one of many transistors used in the field of electronics to control and manage power flows. As an enhancement-mode device, it only becomes active when a positive voltage is applied to the gate. When voltage is applied to the gate, the device becomes conductive, effectively serving as a switch to allow current to flow in a given direction.
Consisting of a metal oxide layer of silicon, this MOSFET has the unique ability to be able to control very large currents, while still maintaining its very small size (the PSMN4R3-100PS,127 has a 2.7mm x 2.1mm footprint). Furthermore, its low on-resistance makes it particularly useful in applications where system efficiency needs to be maximized. The device also has a very fast turn-on time, which makes it extremely useful for high frequency applications.
In terms of applications, PSMN4R3-100PS,127 is most often used in power control systems where it provides fast switching between two pieces of equipment in order to control power consumption. It is also very commonly used in voltage regulation circuits, where it is used to control the flow of current between the input voltage and the output voltage for more stable supply of power. Its fast switching time also lends itself to very high frequency applications, such as in radio frequency equipment and voltage-controlled oscillators.
Aside from its electrical applications, this device can also be used to create interesting opto-electronic diode experiments and displays. For example, when used with an LED, this MOSFET can be used to create an LED display with very slight current drain. Additionally, because the device is highly resistant to heat, it can be used in applications where operating temperature can reach high levels, such as automotive applications.
The PSMN4R3-100PS,127 is an excellent choice for a variety of the most demanding applications, where power efficiency and reliability are of utmost importance. Its fast switching times, small size, and high on-resistance make it an ideal choice for power control systems, voltage regulation circuits, and opto-electronic experiments. As such, this device can prove to be a valuable tool when working on a wide variety of electronic projects.
The specific data is subject to PDF, and the above content is for reference
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