| Allicdata Part #: | 1727-4169-2-ND |
| Manufacturer Part#: |
PSMN6R0-30YL,115 |
| Price: | $ 0.19 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 30V 79A LFPAK |
| More Detail: | N-Channel 30V 79A (Tc) 55W (Tc) Surface Mount LFPA... |
| DataSheet: |  PSMN6R0-30YL,115 Datasheet/PDF |
| Quantity: | 4500 |
| 1500 +: | $ 0.16775 |
Specifications
| Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
| Package / Case: | SC-100, SOT-669, 4-LFPAK |
| Supplier Device Package: | LFPAK56, Power-SO8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 55W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1425pF @ 12V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 6 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 79A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PSMN6R0-30YL, 115 is a single N-channel MOSFET which has a 30-ampere current carrying capacity, in the enhanced mode, and 8-millimeter square plastic package.The application of this part lies in the areas where high power and low-on resistance is necessary. It can be used for a wide range of applications such as amplifying low power signals for digital and analog applications, driving high speed switching circuits, and high power switching applications.The working principle of this part is semiconductor-based. The device is a field-effect transistor which uses metal-oxide-semiconductor (MOS) technology, and has several metal gates on the surface of the semiconductor material. The amount of voltage applied to the metal-oxide-semiconductor determines the number of electrons that can move within the metal oxide.The gates are connected to source and drain regions, made of heavily doped silicon, which is usually opposite in type (N-type or P-type) to the surface of the semiconductor. When a voltage is applied to the gate, it attracts electrons from the source, which form a conducting channel between the source and the drain. This conducting channel acts as an electrical bridge, allowing electrons to move through it and allowing current flow across the device.The PSMN6R0-30YL, 115 is made of high quality semiconductor materials, which makes it ideal for applications requiring high power and low-on resistance. The device is rated for 30-ampere current carrying capacity, in the enhanced mode, and it can operate at a range of 9V-55V.Furthermore, the device is capable of handling a wide range of frequencies and can work with both AC and DC power sources. It is also capable of handling a wide range of temperature, from -55℃ to +175℃, which makes it suitable for use in both high and low temperature environments.Overall, the PSMN6R0-30YL, 115 is an ideal choice for a wide range of high power switching applications where low-on resistance is essential. The device is also suitable for use in both high and low temperature environments.The specific data is subject to PDF, and the above content is for reference
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