PSMN7R0-100PS,127 Allicdata Electronics
Allicdata Part #:

1727-4282-ND

Manufacturer Part#:

PSMN7R0-100PS,127

Price: $ 1.44
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 100V 100A TO220AB
More Detail: N-Channel 100V 100A (Tc) 269W (Tc) Through Hole TO...
DataSheet: PSMN7R0-100PS,127 datasheetPSMN7R0-100PS,127 Datasheet/PDF
Quantity: 5232
1 +: $ 1.31040
50 +: $ 1.05475
100 +: $ 0.94922
500 +: $ 0.73828
1000 +: $ 0.61172
Stock 5232Can Ship Immediately
$ 1.44
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: --
Power Dissipation (Max): 269W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6686pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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PSMN7R0-100PS,127 Introduction

The PSMN7R0-100PS,127 is a robust Surface Mount ultra-low RdsON Single N-channel Enhancement Mode MOSFET from Infineon. It is a versatile, reliable semiconductor component that can be used in an array of scenarios and various applications. The PSMN7R0-100PS,127 is a low voltage transistor with a low dynamic resistance of only 0.0526 Ohms at a 4.5V gate drive, which makes it suitable for use in a variety of consumer and industrial applications. It also has a high power density and excellent thermal conductivity. The PSMN7R0-100PS,127 has a very low gate capacitance of only 2.2 fF, making it especially suitable for fast switching applications. Additional features make it a great option when using high current requirements.

Application fields

One of the great things about the PSMN7R0-100PS,127 is its versatile application field. This device is capable of covering a wide range of application fields, such as lighting, loudspeakers, motor control, and power management. For example, it can be used in lighting applications by controlling the current intensity to control the brightness. In loudspeakers, it can control the signal amplification. In motor control systems, it can be used to regulate the speed of the motors. Finally, it is optimal for power management applications, as it has the capability to reduce power loss in the circuit and conserve energy. All of these application fields demonstrate the versatility of the PSMN7 R0-100PS,127.

Working principle

The PSMN7R0-100PS,127 is a single N-channel MOSFET, meaning it consists of one N-type and one P-type semiconductor material. As a result, the flow of current between these materials is regulated by the MOSFET\'s gate, and it can either block or allow current to flow. The MOSFET has two modes, \'enhancement\' and \'depletion\', depending on the voltage applied to the gate. In enhancement mode, the gate voltage is positive and pulls in current, while in depletion mode, it is negative and blocks current. The PSMN7R0-100PS,127 comes in enhancement mode, meaning it pulls in current when the gate voltage is positive, and blocks current when the voltage is negative.

Conclusion

The PSMN7R0-100PS,127 is a robust, low voltage, single N-channel MOSFET from Infineon that is capable of covering a wide range of applications. Its low dynamic resistance is favorable for use in consumer and industrial applications, and can be used for controlling the current in lighting, amplification in loudspeakers, regulating the speed of motors in motor control systems, and conserving energy in power management applications. It is also beneficial since it operates in enhancement mode, meaning it can pull current when a positive voltage is applied to the gate, and block current when the voltage is negative.

The specific data is subject to PDF, and the above content is for reference

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