PSMN7R6-60BS,118 Allicdata Electronics
Allicdata Part #:

1727-7215-2-ND

Manufacturer Part#:

PSMN7R6-60BS,118

Price: $ 0.54
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 60V 92A D2PAK
More Detail: N-Channel 60V 92A (Tc) 149W (Tc) Surface Mount D2P...
DataSheet: PSMN7R6-60BS,118 datasheetPSMN7R6-60BS,118 Datasheet/PDF
Quantity: 4800
800 +: $ 0.49165
Stock 4800Can Ship Immediately
$ 0.54
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 149W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2651pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38.7nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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A PSMN7R6-60BS,118 is a power MOSFET transistor that operates in a single mode. It\'s a single field effect transistor that is used in various applications and produces various results.

The PSMN7R6-60BS,118 is a versatile MOSFET transistor that is suitable for multiple uses. It can be used in power amplifiers, power converters, switching applications, and more. With its high forward conductance and low on-state resistance, it is particularly useful for high power applications.

The PSMN7R6-60BS,118 comes in two variants. The first variant is the PSMN7R6-60BS,118-A, which operates in a dual mode. This variant is mainly used to amplify signals and is commonly used in power amplifiers. The second variant is the PSMN7R6-60BS,118-B, which operates in a single mode. This variant is mainly used for switching and is the more popular choice for applications like power converters and DC-DC switching.

The working principle of the PSMN7R6-60BS,118 is based on the principle of field effect transistors (FETs). A field effect transistor is a three-terminal device that is used to control current and voltage flow. It consists of two terminals or “gates”, the source and the drain. The third terminal is the gate, which is used to control the flow of current.

When a voltage is applied to the gate, an electric field is created around the gate that attracts electrons from the source, which then travel to the drain and complete the current, which is amplified in the process. This is how the PSMN7R6-60BS,118 works in order to achieve various results, such as controlling voltage or current, switching and amplifying signals, and more.

The PSMN7R6-60BS,118 is a versatile MOSFET transistor that can be used in various applications, from power amplifiers to power converters, and more. It works on the principle of field effect transistors, meaning it uses an electric field created around its gate to attract electrons from the source and then transmits them to the drain to complete the current. This method of operation makes it ideal for a variety of applications that require high power or fast switching.

The specific data is subject to PDF, and the above content is for reference

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