Allicdata Part #: | 1727-4271-2-ND |
Manufacturer Part#: |
PSMN8R3-40YS,115 |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 40V 70A LFPAK |
More Detail: | N-Channel 40V 70A (Tc) 74W (Tc) Surface Mount LFPA... |
DataSheet: | PSMN8R3-40YS,115 Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.17884 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 74W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1215pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8.6 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors are a type of semiconductor devices used in electronic circuits. They function as switches, amplifying, and/or switching electronic signals and electrical power. FETs (Field-Effect Transistors) and MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors) are two types of transistors. PSMN8R3-40YS,115 is a single MOSFET that is commonly used in circuit design.
Application Field
PSMN8R3-40YS,115 MOSFET is primarily used for switching applications and is mainly used in low-power circuits, such as integrated circuit design, power supply design, and system-on-chip (SoC) design. It is also used in power management units (PMUs) and in battery circuits. The device is also used in automotive applications such as air conditioning control and engine control. It is also used for industrial applications such as manufacturing controls, power regulation, and motor control.
Working Principle
PSMN8R3-40YS,115 MOSFET works by having a voltage difference applied across a gate of the device, which affects the resistance of a channel between two output terminals. When the gate voltage is applied, minority carriers are attracted to the gate, forming a channel between the output terminals. This changes the resistance of the channel, which in turn affects the current that flows through the channel. This mechanism allows the device to act as a switch, allowing current to flow between the two output terminals.
The device can also be used to amplify signals. When a signal is applied to the gate, it causes a change in current flowing through the output terminals. This change is much larger than the input signal, which allows the device to amplify the input signal. This is essential in many types of circuits, such as amplifiers and radio transmitters.
PSMN8R3-40YS,115 MOSFET is a versatile device, and it has a wide variety of applications. It is widely used in digital circuits, and it can also be used in power management and control applications. The device is relatively inexpensive and can be found in many different types of circuits.
The specific data is subject to PDF, and the above content is for reference
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