Allicdata Part #: | PSMN8R7-100YSFX-ND |
Manufacturer Part#: |
PSMN8R7-100YSFX |
Price: | $ 0.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | PSMN8R7-100YSF/SOT669/LFPAK |
More Detail: | N-Channel 100V 100A 198W Surface Mount LFPAK56, Po... |
DataSheet: | PSMN8R7-100YSFX Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.43470 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 198W |
FET Feature: | -- |
Vgs (Max): | -- |
Gate Charge (Qg) (Max) @ Vgs: | 38.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PSMN8R7-100YSFX is a single N-channel enhancement mode Field Effect Transistor (FET). It belongs to the STripFET II family and is designed using STripFET advanced and low on-resistance technology. The transistor is specifically designed and able to operate in higher current range and it can be used in many applications, ranging from low to high current applications.
The applications of PSMN8R7-100YSFX can be extended from the small signal applications to the power switch porting applications such as the power switching, voltage regulation, battery protection and more. Additionally, the components can be used in various automotive systems like engine control, transmission control and more.
The operating principles of PSMN8R7-100YSFX is mainly based on FET physics. When a gate source voltage (Vgs) is applied to the device, the electrons are attracted from the source to the drain terminal. This in turn increases the conductivity of electrons between the source and the drain terminal leading to a better signal amplifying capability. The current will be linearly proportional to the gate to source voltage. A higher voltage applied to the gate would cause less resistance and the current can flow easily between the two terminals.
The drain to source terminal’s resistance is considered as a key parameter while considering the performance of the transistor device. The drain to source resistance is mainly determined by the applied gate to source voltage. At higher voltage, the drain to source resistance would be low as the electrons would flow easily between the typical terminals of the transistor.
A key advantage of PSMN8R7-100YSFX over some other types of transistors is its low RDSon that is, its Drain to Source on-state resistance. This is due to the special design of the transistor combined with its low capacitance and high switching speed.
In addition to the low RDSon offered by this transistor, the PSMN8R7-100YSFX also provides enhanced flexibility and high performance. The complete range of devices can work over a wide temperature range, ranging from -55°C to 150°C. This makes it particularly suitable for automotive applications, where the temperature may vary drastically over short periods of time.
Overall, the PSMN8R7-100YSFX is a versatile FET with excellent features, making it suitable for many applications. Thanks to its advanced technology, low RDSon and wide temperature range, the component is widely used in various applications including automotive, consumer, industrial and more.
The specific data is subject to PDF, and the above content is for reference
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