PSMN8R7-80BS,118

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	170W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3346pF @ 40V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	52nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	8.7 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	90A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The PSMN8R7-80BS is a field effect transistor (FET; sometimes called an insulated-gate field effect transistor or MOSFET) designed specifically for low power, high speed switching operations and comes with many useful features. This article will discuss the application fields, working principle, and some of the features of the PSMN8R7-80BS.Application fieldsThe PSMN8R7-80BS is typically used to switch current in circuits where supply voltage and power demand is moderate. It is also often used for microprocessor control, telecommunications, and various types of amplifiers. In addition, the device can be used for many other electronic applications requiring high-speed, high-efficiency switching.Working principleThe PSMN8R7-80BS is a single type bipolar junction transistor (BJT) device which is constructed from two layers of silicon and an epitaxial layer of germanium. This device is known as a field-effect transistor (FET) or MOSFET (metal–oxide semiconductor field-effect transistor).In order to understand how the device works, it is necessary to understand the underlying physics of electric current. The device consists of two electrodes, the source and the drain, which are connected to an electrical circuit. An electric current flows from the source to the drain through the gate electrode when a voltage is applied. The gate electrode acts as a control element; when no voltage is applied, the gate is \'open\', allowing the current to flow through the gate, but when a voltage is applied, the gate is \'closed\' and the current flow is limited.FeaturesThe PSMN8R7-80BS is an N-channel MOSFET (metal–oxide semiconductor field effect transistor) designed to offer exceptional speed and efficiency when used in low voltage, high-speed switching applications. The device is rated for an on-state resistance of 0.84Ω maximum and an on-state current of 75A maximum.The PSMN8R7-80BS has a maximum breakdown voltage of 75V and an operating temperature range of -55°C to 150°C. The device also has an integrated built-in diode to reduce current transitions and improved reliability.The PSMN8R7-80BS is also equipped with latch prevention features which can reduce energy consumption during off-state operations. This device also has high-speed switching capabilities, allowing it to handle fast switching cycles and make it ideal for high-frequency circuits.ConclusionThe PSMN8R7-80BS is a field effect transistor (FET) which is specially designed for high-speed, high-efficiency switching operations. It is an N-channel MOSFET device which has a low on-state resistances and a 75A maximum on-state current rating. The device is also equipped with many useful features such as latch prevention, integrated built-in diodes to reduce current transitions and improved reliability, and a wide temperature range which allows it to be used in a variety of operating conditions. For these reasons, the PSMN8R7-80BS is an ideal choice for low power, high speed switching operations and many other electronic applications.

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