Allicdata Part #: | 1727-5898-ND |
Manufacturer Part#: |
PSMN8R7-80PS,127 |
Price: | $ 1.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 80V TO220AB |
More Detail: | N-Channel 80V 90A (Tc) 170W (Tc) Through Hole TO-2... |
DataSheet: | PSMN8R7-80PS,127 Datasheet/PDF |
Quantity: | 5281 |
1 +: | $ 1.13400 |
50 +: | $ 0.90896 |
100 +: | $ 0.79538 |
500 +: | $ 0.61683 |
1000 +: | $ 0.48697 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 170W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3346pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8.7 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The PSMN8R7-80PS,127 is a type of transistor, specifically a Field-Effect Transistor, or FET. This type of transistor functions by using an electric field to periodically switch a current, in contrast to traditional transistors which use current to switch a current. It is a type of FET known as a metal-oxide-semiconductor field effect transistor, or MOSFET. The "metal-oxide-semiconductor" part of the name comes from the thin layer of metal oxide that lies between the semiconductor and the gate of the transistor. This layer is responsible for controlling the current flow through the transistor.
The PSMN8R7-80PS,127 is a single, unipolar MOSFET. Unipolar transistors are devices that are structured such that, when an electric field is applied across them, either only electrons or only holes move, depending on the circuit. In contrast, bipolar transistors are structured such that both electrons and holes can move when an electric field is applied. The unipolar nature of this device makes it ideal for applications requiring a high degree of switching speed.
The PSMN8R7-80PS,127 has a maximum drain-to-source voltage of 80 volts and a maximum drain current of 127 amperes. It is designed for use in power applications such as lighting or automotive. The high drain current makes it suitable for applications where large amounts of current need to be switched rapidly, while the high drain-to-source voltage ensures that the device can withstand large voltages.
The most common way of controlling this type of FET is by applying a voltage to the gate. When a positive voltage is applied to the gate, the electric field closes the channel and the transistor is "on". When a negative voltage is applied to the gate, the electric field opens the channel and the transistor is "off". This is known as voltage-mode control. The PSMN8R7-80PS,127 also has the capability to be controlled with a current, known as current-mode control.
In addition to voltage and current control, the PSMN8R7-80-PS,127 can also be controlled by temperature. It has a wide operating temperature range of -55°C to +150°C, which allows it to be used in a variety of temperature-sensitive applications.
The PSMN8R7-80PS,127 is an ideal device for applications requiring fast switching, high current, and a wide temperature range. Its excellent characteristics make it suitable for power applications, while its versatility makes it useful in a wide range of applications. With its high drain current and wide temperature range, the PSMN8R7-80PS,127 is an excellent choice for applications requiring fast switching and high current.
The specific data is subject to PDF, and the above content is for reference
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