PSMN8R7-80PS,127 Allicdata Electronics
Allicdata Part #:

1727-5898-ND

Manufacturer Part#:

PSMN8R7-80PS,127

Price: $ 1.25
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 80V TO220AB
More Detail: N-Channel 80V 90A (Tc) 170W (Tc) Through Hole TO-2...
DataSheet: PSMN8R7-80PS,127 datasheetPSMN8R7-80PS,127 Datasheet/PDF
Quantity: 5281
1 +: $ 1.13400
50 +: $ 0.90896
100 +: $ 0.79538
500 +: $ 0.61683
1000 +: $ 0.48697
Stock 5281Can Ship Immediately
$ 1.25
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 170W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3346pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PSMN8R7-80PS,127 is a type of transistor, specifically a Field-Effect Transistor, or FET. This type of transistor functions by using an electric field to periodically switch a current, in contrast to traditional transistors which use current to switch a current. It is a type of FET known as a metal-oxide-semiconductor field effect transistor, or MOSFET. The "metal-oxide-semiconductor" part of the name comes from the thin layer of metal oxide that lies between the semiconductor and the gate of the transistor. This layer is responsible for controlling the current flow through the transistor.

The PSMN8R7-80PS,127 is a single, unipolar MOSFET. Unipolar transistors are devices that are structured such that, when an electric field is applied across them, either only electrons or only holes move, depending on the circuit. In contrast, bipolar transistors are structured such that both electrons and holes can move when an electric field is applied. The unipolar nature of this device makes it ideal for applications requiring a high degree of switching speed.

The PSMN8R7-80PS,127 has a maximum drain-to-source voltage of 80 volts and a maximum drain current of 127 amperes. It is designed for use in power applications such as lighting or automotive. The high drain current makes it suitable for applications where large amounts of current need to be switched rapidly, while the high drain-to-source voltage ensures that the device can withstand large voltages.

The most common way of controlling this type of FET is by applying a voltage to the gate. When a positive voltage is applied to the gate, the electric field closes the channel and the transistor is "on". When a negative voltage is applied to the gate, the electric field opens the channel and the transistor is "off". This is known as voltage-mode control. The PSMN8R7-80PS,127 also has the capability to be controlled with a current, known as current-mode control.

In addition to voltage and current control, the PSMN8R7-80-PS,127 can also be controlled by temperature. It has a wide operating temperature range of -55°C to +150°C, which allows it to be used in a variety of temperature-sensitive applications.

The PSMN8R7-80PS,127 is an ideal device for applications requiring fast switching, high current, and a wide temperature range. Its excellent characteristics make it suitable for power applications, while its versatility makes it useful in a wide range of applications. With its high drain current and wide temperature range, the PSMN8R7-80PS,127 is an excellent choice for applications requiring fast switching and high current.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "PSMN" Included word is 40
Part Number Manufacturer Price Quantity Description
PSMN1R6-60CLJ Nexperia USA... 0.0 $ 1000 MOSFET N-CH 60V D2PAKMOSF...
PSMN2R1-60CSJ Nexperia USA... 0.0 $ 1000 MOSFET N-CH 60V D2PAKMOSF...
PSMN1R6-40YLC:115 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 40V 100A POWE...
PSMN012-25YLC,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 25V 33A LFPAK...
PSMN1R6-40YLC,115 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 40V 100A LFPA...
PSMN023-40YLCX NXP USA Inc 0.0 $ 1000 MOSFET N-CH 40V 24A LFPAK...
PSMN1R8-30BL,118 Nexperia USA... 0.92 $ 1000 MOSFET N-CH 30V 100A D2PA...
PSMN7R5-30MLDX Nexperia USA... -- 1000 MOSFET N-CH 30V 57A LFPAK...
PSMN085-150K,518 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 150V 3.5A SOT...
PSMN1R7-25YLC,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 25V 100A LFPA...
PSMN3R7-30YLC,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V 100A LFPA...
PSMN3R7-25YLC,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 25V 97A LFPAK...
PSMN3R2-30YLC,115 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 30V 100A LFPA...
PSMN3R2-25YLC,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 25V 100A LFPA...
PSMN9R0-30LL,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V QFN3333N-...
PSMN7R0-40LS,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 40V QFN3333N-...
PSMN3R8-30LL,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V QFN3333N-...
PSMN023-80LS,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 80V 34A QFN33...
PSMN008-75P,127 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 75V 75A TO220...
PSMN035-150P,127 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 150V 50A SOT7...
PSMN006-20K,518 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 20V 32A 8-SOI...
PSMN070-200P,127 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 200V 35A TO22...
PSMN9R0-30YL,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V 61A LFPAK...
PSMN050-80PS,127 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 80V 22A TO220...
PSMN005-55B,118 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 55V 75A D2PAK...
PSMN005-30K,518 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 30V 20A SOT96...
PSMN038-100K,518 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 100V SOT96-1N...
PSMN165-200K,518 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 200V 2.9A SOT...
PSMN003-30P,127 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 30V 75A TO220...
PSMN013-30LL,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V QFN3333N-...
PSMN014-60LS,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 60V QFN3333N-...
PSMN017-30LL,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH QFN3333N-Chan...
PSMN035-100LS,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH QFN3333N-Chan...
PSMN3R5-30LL,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V QFN3333N-...
PSMN5R8-30LL,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V QFN3333N-...
PSMN1R9-25YLC,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 25V 100A LFPA...
PSMN011-30YL,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V 51A LFPAK...
PSMN5R9-30YL,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V 78A LFPAK...
PSMN8R0-30YL,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V 62A LFPAK...
PSMN7R5-25YLC,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 25V 56A LL LF...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics