SI7107DN-T1-E3

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The SI7107DN-T1-E3 field-effect transistor is a device intended for use in high-power applications. It is a single high-power device, suitable for a wide range of power supplies, high efficiency and low thermal resistance.

The SI7107DN-T1-E3 is an insulated gate field-effect transistor (IGFET) that utilizes a metal–insulator–semiconductor (MIS) structure. It has an integrated drain–source pickup diode and built-in avalanche breakdown protection. This device has an avalanche strength that is twice the datasheet limits.

The SI7107DN-T1-E3 is an N-channel FET, constructed with a Si/Si-doped gallium arsenide substrate. It has a P+ substrate and a single N-channel, with a channel length of 7.5 µm. The device features a 30 V drain–source breakdown voltage and can handle up to a maximum maximum voltages of 60 V.

The key features of the SI7107DN-T1-E3 include low thermal resistance, low output capacitance, and excellent frequency stability. The device has a maximum drain–source on-state resistance of 0.00038 Ω and a maximum gate–source voltage of +25 V.

The device can be operated in two operational modes, namely the linear mode and the saturation mode. In the linear mode, the gate–source voltage is relatively low which allows the current to flow linearly across the drain–source. In the saturation mode, the gate–source voltage is relatively high, allowing the device to be operated in a fully-saturated state, thus allowing the device to perform faster and more efficient switching operations.

The device can also be operated in the low-frequency linear mode. In this mode, the drain–source voltage is relatively low and the device operates in the linear region. The low-frequency linear mode is suitable for low-impedance applications, such as motor control, switching, and power supply applications.

The SI7107DN-T1-E3 has a wide range of application fields due to its high power and superior performance. These fields include power supplies, motor control, integrated circuit switches, voltage regulators, and consumer electronics. Additionally, the device can also be used for audio amplifiers, wireless communication systems and communication network applications.

Overall, the SI7107DN-T1-E3 field-effect transistor is a robust and reliable device suitable for a wide range of high-power applications. Its wide range of application fields, superior performance, and low thermal resistance make it an ideal device for power supplies, motor control, and consumer electronics.

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