SI7172ADP-T1-RE3

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The SI7172ADP-T1-RE3 is a high-speed enhancement-mode vertical power MOSFET designed specifically for the automotive market. It is built using STMicroelectronics STripFET™ technology, which combines differential linear power capabilities and high switching speeds. This power transistor provides excellent RDS ON resistance with high switching speeds. It also offers excellent ESD performance, common-mode transient immunity, and low gate charge. The SI7172ADP-T1-RE3 is ideal for use in applications such as automotive lighting, automotive engine control, or automotive ESD protection.

The SI7172ADP-T1-RE3 power MOSFET is a single, enhancement-mode power semiconductor device fabricated in a vertical structure. It contains a vertical drain, gate, and source connected to substrate. It utilizes an insulated gate to control the electrical characteristics of the drain and source. The source and drain of the device are designed to be isolated from each other, allowing it to be used in high voltage applications such as automotive engine control and automotive ESD protection. When connected in a circuit, the SI7172ADP-T1-RE3 functions as a switch-mode rf power amplifier.

The SI7172ADP-T1-RE3 power MOSFET is capable of switching between two states, either ON or OFF, depending on the voltage applied to the gate. When the gate is at a low voltage, the channel between the drain and source is cut off, keeping the current from flowing. When the gate is at a high voltage, the channel between the drain and source is opened, allowing current to flow through the device. This is referred to as enhancement-mode since the switch requires an additional voltage in order to turn it ON.

The SI7172ADP-T1-RE3 power MOSFET is characterized by its extremely low RDS ON resistance, which is the resistance in ohms when the device is in its ON state. It also has a low gate charge, which is the electrical energy required to turn the device ON and OFF. This is essential for designing efficient power supplies, as it allows for faster switching times and increased efficiency. Additionally, the device offers excellent ESD protection, common-mode transient immunity, and an extremely high temperature rating of 225°C.

The SI7172ADP-T1-RE3 has a wide range of uses and applications, from automotive lighting to automotive engine control or automotive ESD protection. Due to its extremely low RDS ON resistance and low gate charge, this power MOSFET is ideal for high frequency applications requiring excellent ESD protection, as well as for use in power supplies and switch-mode rf power amplifiers. Thanks to its wide temperature range and common-mode transient immunity, it can also be used in high temperature environments where operations are critical.

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