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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
FDB86366-F085TR -ND	FDB86366-F085	ON Semiconductor	View more Series: Automotive, AEC-Q101, PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6280pF @ 40V Power Dissipation (Max): 176W (Tj) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	800+: $0.9063
SQD50P08-25L_GE 3TR-ND	SQD50P08-25L_GE 3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25 mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 137nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5350pF @ 25V Power Dissipation (Max): 136W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
FDP032N08B-F102 -ND	FDP032N08B-F102	ON Semiconductor	View more Series: PowerTrench Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 144nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10965pF @ 40V Power Dissipation (Max): 263W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	269 Order	--
FDBL86366-F085T R-ND	FDBL86366-F085	ON Semiconductor	View more Series: Automotive, AEC-Q101, PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6320pF @ 40V Power Dissipation (Max): 300W (Tj) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOF Package / Case: 8-PowerSFN	1000 Order	2000+: $0.8629
1727-1896-2-ND	BUK964R2-80E,11 8	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 17130pF @ 25V Power Dissipation (Max): 349W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	800+: $1.0131
1727-7123-2-ND	PSMN4R4-80BS,11 8	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 40V Power Dissipation (Max): 306W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	800+: $1.0426
497-16315-2-ND	STH145N8F7-2AG	STMicroelectronics	View more Series: Automotive, AEC-Q101, STripFET F7 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6340pF @ 40V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
SUM60030E-GE3TR -ND	SUM60030E-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7910pF @ 40V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
497-13873-2-ND	STH270N8F7-2	STMicroelectronics	View more Series: DeepGATE, STripFET VII Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 50V Power Dissipation (Max): 315W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: HPAK Package / Case: TO-263-3, DPak (2 Leads + Tab) Variant	1000 Order	1000+: $2.7963
FDC3535TR-ND	FDC3535	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 2.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 183 mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 40V Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	1000 Order	--
1727-5280-ND	PSMN4R3-80ES,12 7	Nexperia USA Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8161pF @ 40V Power Dissipation (Max): 306W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	495 Order	1+: $2.1861 50+: $1.7621 100+: $1.586
1727-1810-2-ND	BUK9Y14-80E,115	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 14 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 4640pF @ 25V Power Dissipation (Max): 147W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669, 4-LFPAK	1000 Order	1500+: $0.2948
IRLR2908PBF-ND	IRLR2908PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 28 mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V Power Dissipation (Max): 120W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	9181 Order	--
SI4896DY-T1-GE3 TR-ND	SI4896DY-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 6.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250A (Min) Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 1.56W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
1727-7213-2-ND	PSMN6R5-80BS,11 8	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.9 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4461pF @ 40V Power Dissipation (Max): 210W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	800+: $0.6613
RJK0855DPB-00#J 5TR-ND	RJK0855DPB-00#J 5	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 10V Power Dissipation (Max): 60W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	1000 Order	2500+: $0.7238
497-16002-2-ND	STH170N8F7-2	STMicroelectronics	View more Series: STripFET F7 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8710pF @ 40V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $0.9117 2000+: $0.8488 5000+: $0.8174
497-16032-2-ND	STD110N8F6	STMicroelectronics	View more Series: STripFET F6 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9130pF @ 40V Power Dissipation (Max): 167W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.4615
HAT2267H-EL-E-N D	HAT2267H-EL-E	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 12.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V Power Dissipation (Max): 25W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	1000 Order	--
TK100E08N1S1X-N D	TK100E08N1,S1X	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 40V Power Dissipation (Max): 255W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	118 Order	1+: $4.0572 50+: $3.2603 100+: $2.9705 500+: $2.4053 1000+: $2.0286
296-37286-5-ND	CSD19501KCS	Texas Instruments	View more Series: NexFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 3.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 40V Power Dissipation (Max): 217W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1015 Order	--
296-37169-5-ND	CSD19506KCS	Texas Instruments	View more Series: NexFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 40V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	3136 Order	--
296-37287-5-ND	CSD19505KCS	Texas Instruments	View more Series: NexFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 150A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 100A, 6V Vgs(th) (Max) @ Id: 3.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7820pF @ 40V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1444 Order	--
1727-7209-2-ND	PSMN017-80BS,11 8	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1573pF @ 40V Power Dissipation (Max): 103W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	5600 Order	800+: $0.3977
FDMS86369-F085T R-ND	FDMS86369-F085	ON Semiconductor	View more Series: Automotive, AEC-Q101, PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 65A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2470pF @ 40V Power Dissipation (Max): 107W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	3000 Order	3000+: $0.407
1727-7206-2-ND	PSMN012-80BS,11 8	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2782pF @ 12V Power Dissipation (Max): 148W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	2400 Order	800+: $0.4993
1727-7217-2-ND	PSMN8R7-80BS,11 8	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3346pF @ 40V Power Dissipation (Max): 170W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	4000 Order	800+: $0.5536
1727-1093-2-ND	BUK9611-80E,118	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 48.8nC @ 5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 7149pF @ 25V Power Dissipation (Max): 182W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	4000 Order	800+: $0.5908
1727-5892-ND	PSMN017-80PS,12 7	Nexperia USA Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1573pF @ 40V Power Dissipation (Max): 103W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	5341 Order	1+: $0.819 50+: $0.6544 100+: $0.5726 500+: $0.4441 1000+: $0.3506
1727-7124-2-ND	PSMN5R0-80BS,11 8	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6793pF @ 40V Power Dissipation (Max): 270W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	4000 Order	800+: $0.8641
917-1199-2-ND	EPC2202	EPC	View more Series: Automotive, AEC-Q101, eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 18A Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 17 mOhm @ 11A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V Vgs (Max): +5.75V, -4V Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (6-Solder Bar) Package / Case: Die	27500 Order	--
HAT2279H-EL-ETR -ND	HAT2279H-EL-E	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3520pF @ 10V Power Dissipation (Max): 25W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	1000 Order	--
1727-5898-ND	PSMN8R7-80PS,12 7	Nexperia USA Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3346pF @ 40V Power Dissipation (Max): 170W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	5281 Order	1+: $1.134 50+: $0.909 100+: $0.7954 500+: $0.6168 1000+: $0.487
497-16019-5-ND	STP110N8F6	STMicroelectronics	View more Series: STripFET F6 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9130pF @ 40V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	1374 Order	--
1727-5896-ND	PSMN6R5-80PS,12 7	Nexperia USA Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.9 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4461pF @ 40V Power Dissipation (Max): 210W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	3893 Order	1+: $1.2474 50+: $1.0054 100+: $0.9048 500+: $0.7038 1000+: $0.5831
FDB024N08BL7TR- ND	FDB024N08BL7	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 13530pF @ 40V Power Dissipation (Max): 246W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263) Package / Case: TO-263-7, DPak (6 Leads + Tab)	1000 Order	--
1727-5282-ND	PSMN3R5-80PS,12 7	Nexperia USA Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9961pF @ 40V Power Dissipation (Max): 338W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	3114 Order	1+: $1.7955 50+: $1.449 100+: $1.3041 500+: $1.0143 1000+: $0.8404
1727-5285-ND	PSMN4R3-80PS,12 7	Nexperia USA Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8161pF @ 40V Power Dissipation (Max): 306W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	2650 Order	1+: $2.0538 50+: $1.6556 100+: $1.4901 500+: $1.159 1000+: $0.9603
1727-4265-ND	PSMN4R4-80PS,12 7	Nexperia USA Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 40V Power Dissipation (Max): 306W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	2329 Order	1+: $2.1105 50+: $1.7038 100+: $1.5334 500+: $1.1927 1000+: $0.9882
DMT8012LSS-13DI TR-ND	DMT8012LSS-13	Diodes Incorporated	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1949pF @ 40V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	2500+: $0.2536

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