DMN62D1SFB-7B

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The DMN62D1SFB-7B is an N-Channel high voltage trench MOSFET with a high-volume gate charge, allowing for very high switching performance and fast-switching characteristics. It has a drain-source breakdown voltage of 600 Volts and a continuous drain current of 200 mA. It was designed for a wide range of applications in switching, power supply and control systems, such as industrial, automotive, computer, and home appliances.

Applications

The DMN62D1SFB-7B is suitable for various applications. Its low gate resistance makes it a good choice for various high-current and high-frequency power and logic applications such as switching converters, motor controls, voltage regulators and inverters. Its high operating temperature range enables it to be used in automotive systems and other temperature-sensitive applications. The DMN62D1SFB-7B is also ideal for audio amplifiers and other audio applications.

Working Principle

The DMN62D1SFB-7B is a high voltage trench MOSFET with a metal-oxide semiconductor field-effect (MOSFET) structure. It operates in three modes: the ohmic or linear region, the saturation region, and the cut-off region. In the linear region, the MOSFET behaves as a current-controlled resistor wherein the drain-source current, I D , is equal to the gate-source voltage, V GS , multiplied by the drain-source resistance, R DS(on) . In this state, the current increases with the increase of the gate voltage and the drain-source voltage. In the saturation region, the MOSFET is effectively acting as a voltage-controlled switch wherein the device saturates and the drain current I D increases exponentially as the drain-source voltage V DS increases. In the cut-off region, the DMN62D1SFB-7B is turned off and no current flows through the drain-source path.

Advantages

The DMN62D1SFB-7B has a very high switching speed due to its low parasitic gate charge, which enables high frequency operations. It also has a very low on-state resistance, which results in low power dissipation and good efficiency in power circuits. This device is also very reliable with a rated life of 200,000 hours. Additionally, the DMN62D1SFB-7B is RoHS 2 compliant, making it an ideal device for a variety of applications.

Conclusion

The DMN62D1SFB-7B is a versatile N-Channel high voltage trench MOSFET that is ideal for a wide range of applications such as switching, power supply, and control systems. The device has a very high switching speed and low on-state resistance, resulting in good efficiency and reliability. It is also RoHS 2 compliant, making it a great choice for various applications.

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