NVMFS4C01NT3G

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The NVMFS4C01NT3G is a Single N-channel Enhancement Mode Field Effect Transistor (FET), produced by STMicroelectronics. This transistor is manufactured using STMicroelectronics’s proprietary N-channel Advanced Power MOSFET technology. It is also part of STMicroelectronics’s wide range of power MOSFET transistors. It is designed to provide high-efficiency switch mode operation, high inrush current handling, and low on-state resistance.

The NVMFS4C01NT3G specifically is designed for applications such as motor control, switching power supplies, and DC-DC converters. It is able to withstand high voltages, making it ideal for applications in, automotive and consumer electronics, as well as other areas that require high voltages.

The NVMFS4C01NT3G has a maximum drain-source voltage of 100 V, a maximum drain current of 55 A, and an on-state resistance of 2.1 mΩ. It also has a maximum gate-source voltage of 32 V, a maximum gate current of 10 uA, and a maximum power dissipation of 800 mW. Furthermore, the transistor has a very fast switching time of 25 ns and a drain-source breakdown voltage of 800 V.

This transistor has an electrostatic-sensitive device, meaning it is sensitive to static electricity and should be handled with appropriate ESD measures. The device is also RoHS compliant and is rated Lead-free.

The NVMFS4C01NT3G works according to the principle of Voltage-controlled Depletion Mode MOSFETs. It is a voltage controlled device with an insulated gate, as opposed to a current-controlled device with a metal gate. This means that the voltage applied to the gate of the transistor will alter the channel resistance, thereby controlling the drain current. The higher the voltage applied to the gate, the lower the channel resistance, and the higher the drain current. Conversely, the lower the voltage applied to the gate, the higher the channel resistance, and the lower the drain current.

The NVMFS4C01NT3G is a versatile and robust FET transistor device, which can be used in a variety of switch mode applications. Its N-channel MOSFET design provides high efficiency switching, as well as low on-state resistance. Furthermore, its fast switching speed and high voltage tolerance makes it ideal for applications in automotive and consumer electronics.

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