Allicdata Part #: | NVMFS4C01NWFT1G-ND |
Manufacturer Part#: |
NVMFS4C01NWFT1G |
Price: | $ 0.70 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 49A SO8FL |
More Detail: | N-Channel 30V 49A (Ta), 319A (Tc) 3.84W (Ta), 161W... |
DataSheet: | NVMFS4C01NWFT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.62800 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 49A (Ta), 319A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 0.9 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 139nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 10144pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 3.84W (Ta), 161W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN |
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The NVMFS4C01NWFT1G is a dual N-Channel enhancement mode MOSFET that is suitable for a variety of modern electronic device applications. It is provided in a small testing pad that can be directly soldered to a printed circuit board. The NVMFS4C01NWFT1G offers a low on-state resistance and is ideal for use as switching and driver devices in power control applications such as AC/DC power converters. As it is a logic level MOSFET, it can be driven by 5V or higher level signals, making it highly suitable for use with modern microcontroller designs.
The working principle of the NVMFS4C01NWFT1G is based on the field-effect transistor (FET) technology which is commonly used for switching and amplifying electrical signals. The FET is made from a sandwich of conductive semiconductor materials and a gate electrode. When a voltage is applied between the source and the gate, an electric field is generated across the channel that controls the flow of electrons between source and drain terminals. This allows the FET to act as a variable resistor whose resistance can be controlled by changing the voltage applied to the gate.
As the NVMFS4C01NWFT1G is a dual N-Channel FET, it can operate in either an enhancement or depletion mode. In the enhancement mode, the gate voltage required to turn on (conduction) the FET is very low and the FET can be switched on with minimal or no gate current. This makes it ideal for controlling high current load such as motor drivers and power converters. In the depletion mode, the gate voltage is higher and the FET can be turned on and off with digital signals.
The NVMFS4C01NWFT1G is also equipped with a number of built-in protection features such as over-temperature, over-voltage and short-circuit protection. These features help to prevent the FET from being damaged by errors in the design or operation of the circuit. The FET also has an internal temperature sensor to protect it from overheating.
The NVMFS4C01NWFT1G is a versatile and reliable FET that is suitable for a range of modern applications such as motor drivers, AC/DC power converters and switched-mode power supplies. It offers a low on-state resistance and a wide variety of protection features which make it an ideal choice for powering a wide range of modern electronics.
The specific data is subject to PDF, and the above content is for reference
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