NVMFS5113PLT1G Discrete Semiconductor Products

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The NVMFS5113PLT1G is a product from N-Channel MOSFET\'s family. It is a single and efficient MOSFET device.

N-Channel MOSFETs, also known as metal-oxide-semiconductor field-effect transistors (MOSFETs), are power devices that control the flow of current through or off a circuit. They are able to change their electrical resistance according to the amount of current that passes through them. The N-Channel MOSFETs family is designed to work with high-voltage applications that require high-current drain and low supply voltages.

The NVMFS5113PLT1G is designed to be used in applications such as power supplies and motor control systems, as it provides excellent thermal performance, low on-resistance, high current density, and low power dissipation. It has a peak on-resistance of 0.6 ohms, which allows it to provide high switching efficiency and ensures that the device is energy-efficient. It also has a fast response time of less than 150ns and is capable of operating up to 600V.

The working principle of NVMFS5113PLT1G is based on the difference between the gate-source voltage (Vgs) and the threshold voltage (Vth). When the Vgs is increased above the Vth, the device is turned “on”. This occurs because the electrons in the gate region travel to the channel region, creating a conducting path between the drain and source. As long as the Vgs remains above the threshold voltage, the device remains “on” and current can flow.

When the gate-source voltage is decreased below the threshold voltage, the device is turned “off”. This happens because the electrons in the gate region travel away from the channel region, thus the conducting path between the source and the drain is interrupted. Therefore, the device is not able to conduct current.

The NVMFS5113PLT1G is an ideal MOSFET device for use in applications that require low power dissipation, high current densities, and fast response times. It can be found in a variety of applications, including power supplies, motor control systems, and other high-voltage applications. In addition, its low on-resistance and fast switching enable it to be energy-efficient, keeping devices and components cool and protecting them from damage.

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