| Allicdata Part #: | NVMFS5A140PLZT1G-ND |
| Manufacturer Part#: |
NVMFS5A140PLZT1G |
| Price: | $ 1.11 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | -40V4.2MOHMSINGLE |
| More Detail: | P-Channel 40V 20A (Ta), 140A (Tc) 3.8W (Ta), 200W ... |
| DataSheet: | NVMFS5A140PLZT1G Datasheet/PDF |
| Quantity: | 1000 |
| 1500 +: | $ 0.99800 |
| Gate Charge (Qg) (Max) @ Vgs: | 136nC @ 10V |
| Package / Case: | 8-PowerTDFN, 5 Leads |
| Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.8W (Ta), 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7400pF @ 20V |
| Vgs (Max): | ±20V |
| Series: | Automotive, AEC-Q101 |
| Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
| Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Ta), 140A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
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NVMFS5A140PLZT1G is an N-channel, Enhancement mode Power MOSFET (aka E-MOSFET) developed with advanced trench technology to provide enhanced performance in a cost-effective package. It is one of STMicroelectronics’ transistors for FETs, MOSFETs, single applications, and generally configured as switch components and ideal for applications that require low gate drive and high-speed switching.
The NVMFS5A140PLZT1G is particularly suitable for use in motor control applications, as well as in LED lighting or LED display applications, where it shows superior performance. This transistor is rated at an absolute maximum Vds of 140V, Id at 5A, Rds at 2.9 mOhms, and boasts a 11nC maximum gate charging time. It also provides good performance in high frequency applications and supports fast switching for power converters. Its superior figure–of merit (FOM) of QgxRds, makes it easy to achieve the highest switching performances.
To use the NVMFS5A140PLZT1G, a gate driver is required. A standard gate driver can be used with suitable parameters to achieve optimal and reliable operation. The main operation principle of this transistor is based on a three-terminal structure that includes the source, gate and drain. When the voltage on the gate is lower than that of the source, a depletion region surrounds the channel and the device is said to be in ‘off-state’, blocking the current between the source and drain. When the voltage on the gate exceeds the source, a conductive region known as an ‘inversion layer’ is formed, allowing current to flow thereby turning the transistor ‘on-state’.
The NVMFS5A140PLZT1G is ideal for motor control applications since motor brushes or cyclic power supply can be used to turn the MOSFET off or on. It can also be used for LED lighting and displays to switch the current during operation. In these applications, the device has a drain-source voltage of 140V and handles a current up to 5A.
In summary, the NVMFS5A140PLZT1G is an N-channel, Enhancement mode Power MOSFET suitable for applications that require low gate drive and high-speed switching. It is ideal for motor control, LED lighting, and LED displays because of its superior figure-of-merit, and its drain-source voltage of 140V and current up to 5A.
The specific data is subject to PDF, and the above content is for reference
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NVMFS5A140PLZT1G Datasheet/PDF