| Allicdata Part #: | NVMFS5A140PLZT3G-ND |
| Manufacturer Part#: |
NVMFS5A140PLZT3G |
| Price: | $ 0.99 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | -40V4.2MOHMSINGLE |
| More Detail: | P-Channel 40V 20A (Ta), 140A (Tc) 3.8W (Ta), 200W ... |
| DataSheet: | NVMFS5A140PLZT3G Datasheet/PDF |
| Quantity: | 1000 |
| 5000 +: | $ 0.89476 |
| Gate Charge (Qg) (Max) @ Vgs: | 136nC @ 10V |
| Package / Case: | 8-PowerTDFN, 5 Leads |
| Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.8W (Ta), 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7400pF @ 20V |
| Vgs (Max): | ±20V |
| Series: | Automotive, AEC-Q101 |
| Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
| Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Ta), 140A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
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NVMFS5A140PLZT3G is a high-performance n-channel enhancement mode Field Effect Transistor (FET). It is suitable for use in switching circuits and is commonly used to control low voltage DC circuits and low current signals. It can be used to modulate high power voltages and currents, used as a function of control, amplification, and coupling.
Application Field
NVMFS5A140PLZT3G can be used as a power switch in a variety of electronic devices, such as computer servers, mobile devices, home appliances, and digitalTVs. It can be used as a switch to control the communication between components, including the power sequencing that turns on/off the voltage of a DC-DC converter, a current sensing device, or the load control driver. The device can also be used as a gate driver to control peripheral loads and drives. In addition, this product can be used as an attenuator or a voltage regulator for audio and video applications.
Working Principle
The NVMFS5A140PLZT3G utilizes a metal-oxide semiconductor (MOS) technology to transfer charge between two internal regions. It consists of a source, a drain, and a gate. The source and drain are the inputs, while the gate is the control point where a control voltage is applied. When a control voltage, also known as a gate voltage, is applied to the gate, it changes the electrical field of the metal-oxide semiconductor, affecting the flow of electrons across the channel and creating an electrical current between the source and the drain. This transfer of charge has minimal power consumption and is very efficient for applications that require small or no power consumption. For example, the NVMFS5A140PLZT3G can be used in a switching circuit and be used to control low voltage DC circuits and low current signals.
In summary, NVMFS5A140PLZT3G is a single n-channel enhancement mode Field Effect Transistor (FET) that is typically used for switching circuits and can also be used to modulate high power voltages and currents, used as a function of control, amplification, and coupling. The device utilizes a metal-oxide semiconductor (MOS) technology to control the flow of electrons across the channel and can be used in a wide range of applications, such as computer servers, mobile devices, home appliances, and digitalTVs.
The specific data is subject to PDF, and the above content is for reference
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NVMFS5A140PLZT3G Datasheet/PDF