NVMFS5A160PLZT1G

NVMFS5A160PLZT1G application field and working principle

NVMFS5A160PLZT1G is a single N-channel Logic Enhancement Mode Field Effect Transistor (LEM FET) manufactured by ON Semiconductor. It is a small signal FET with a high voltage (VDS) of 160V and a low current rating (ID) of 30mA.

Types of NVMFS5A160PLZT1G

The transistor comes in two main types:

• Depletion (D-mode) - This type has a diode built in to the substrate that limits the voltage applied to the gate. This makes the transistor "on" when the voltage is below the threshold voltage, and "off" when the voltage is above the threshold.
• Enhancement (E-mode) - This type does not have the diode built in and thus allow for higher voltage to applied to the gate to "push" the transistor on, even at very low voltages. This makes the transistor more effective when dealing with low voltage applications.

NVMFS5A160PLZT1G is an E-mode Logic Enhancement Mode Field Effect Transistor and is therefore suitable for applications that need to operate at low voltage.

Applications of NVMFS5A160PLZT1G

The ON Semiconductor NVMFS5A160PLZT1G is suitable for applications such as high voltage load switch, high voltage gate driver, and output buffer. It can also be used in audio circuits and operational amplifiers. The collector-emitter voltage (VCE) rating is 5V, making it suitable for low voltage applications.

Working Principle of NVMFS5A160PLZT1G

The NVMFS5A160PLZT1G works on the principle of electron flow from source to drain. When current passes through the FET, the electric field generated by the gate causes the electrons to be shifted. This shift causes the current flow to be controlled and hence the FET acts like a switch. When the gate voltage is more than the threshold voltage, the transistor turns "on". Conversely, when the gate voltage is less than the threshold voltage, the transistor turns "off".

The threshold voltage of the NVMFS5A160PLZT1G is typically 2.5V to 4V. The maximum drain current (ID) is 30 mA and the maximum drain-source voltage (Vds) is 160V.

Conclusion

The NVMFS5A160PLZT1G is a microminiature LEM FET suitable for low voltage applications. It has a low threshold voltage and a maximum drain current of 30mA. It is suitable for applications such as high voltage load switch, high voltage gate driver and output buffer circuits. Its collector-emitter voltage rating of 5V also makes it suitable for low voltage operations.