NVMFS5A160PLZWFT3G

Gate Charge (Qg) (Max) @ Vgs:	160nC @ 10V
Package / Case:	8-PowerTDFN, 5 Leads
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 200W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7700pF @ 20V
Vgs (Max):	±20V
Series:	Automotive, AEC-Q101
Vgs(th) (Max) @ Id:	2.6V @ 1mA
Rds On (Max) @ Id, Vgs:	7.7 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	15A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active

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The NVMFS5A160PLZWFT3G is a field-effect transistor or FET that belongs to the single MOSFET category. It is commonly used in a variety of electronics applications, and is favored for its high efficiency, small size, and fast switching speed. This article will discuss the application fields and working principles of the NVMFS5A160PLZWFT3G. The NVMFS5A160PLZWFT3G is primarily used for logic level switching, power control, and signal amplification and conditioning. This FET is designed to be incredibly efficient and low-power consuming, making it ideal for a variety of applications. It is commonly found in power management systems, such as those found in modern computer motherboards and other electronic systems. It can also be used in current sensing circuits and switching power applications. Moreover, this transistor can be used for signal conditioning applications, thanks to its high input impedance and low output impedance. It can be used in audio amplifiers and receivers, and also in signal buffering circuits. The NVMFS5A160PLZWFT3G has also been known to be used in DC motor controllers, voltage regulators, and low-voltage power supplies.The NVMFS5A160PLZWFT3G is a single enhancement mode MOSFET, which means that it is a voltage independent device with an insulated-gate field-effect transistor (IGFET). This device is built on a silicon, usually n-type, substrate and is of the planar structure. It has a source, drain, and gate electrode, which are insulated from the substrate by the silicon dioxide layer. The gate electrode is the controlling electrode and is used to generate inversion channels or "pinched-off regions" between the source and drain. Current flow in the NVMFS5A160PLZWFT3G is initiated by the voltage applied to the circuit. When either a positive or negative voltage is applied to the gate, electron charge carriers are drawn to the gate. This process is known as induced inversion layer and it allows current to flow through the source-drain path.The NVMFS5A160PLZWFT3G is also highly efficient due to its low input capacitance and high switching speed. This makes it a great choice for high frequency circuits, as the lower voltage and higher switching speed keep losses to a minimum. Furthermore, this FET features a low on-resistance and high off-resistance ratio, making it ideal for use as a switch. In conclusion, the NVMFS5A160PLZWFT3G is a single-channel field effect transistor that is capable of delivering high performance in a variety of applications. It is capable of providing efficient power control, signal amplification and conditioning, as well as providing low-voltage switching power supplies and voltage regulators. It is a highly efficient device, featuring a low input capacitance and high switching speed, making it ideal for use in high frequency circuits.

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