Allicdata Part #: | NVMFS5C404NAFT1G-ND |
Manufacturer Part#: |
NVMFS5C404NAFT1G |
Price: | $ 1.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 53A 378A 5DFN |
More Detail: | N-Channel 40V 53A (Ta), 378A (Tc) 3.9W (Ta), 200W ... |
DataSheet: | NVMFS5C404NAFT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 1.10944 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 53A (Ta), 378A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 0.7 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 128nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 8400pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.9W (Ta), 200W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN, 5 Leads |
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The NVMFS5C404NAFT1G is a single N-channel Field Effect Transistor (FET), which has an integrated circuit developed by ON Semiconductor. It is made of Silicon and uses a Silicon-Controlled Rectifier (SCR) technology to enable low on-state resistance and visual backlighting. This N-channel FET is designed for applications that require high switching speed and low saturation voltage.
The NVMFS5C404NAFT1G is ideal for both power switching and general-purpose applications. It has a maximum drain source voltage rating of 60V (VDS) and a maximum drain source current rating of 4A (ID). The device also has an RDS(on) of 0.7mΩ and an RDS(on) temperature coefficient of -200V/V. The N-channel FET has a uni-directional blocking property, which allows for the control of DC voltage and current in either direction and the ability to operate up to 500V in reverse voltage.
The operating temperature of the NVMFS5C404NAFT1G ranges from -55°C to 150°C. It has a breakdown voltage (BVDSS) of 60V, a maximum ion (Rg) of 100MΩ, and a reverse recovery time (trr) of 8ns. The device also has an input capacitance (Ciss) of 58pF and an output capacitance (Coss) of 24pF.
The working principle of the NVMFS5C404NAFT1G is based on the principle of capacitance. When AC current flows through the FET, a change in the input capacitance results. This in turn creates a change in the output voltage. The output voltage then affects the drain source voltage, which can be modulated to achieve the desired level of current.
In terms of application fields, the NVMFS5C404NAFT1G can be used in industrial automation, medical equipment, consumer electronics, and automotive applications. It is suitable for high-frequency switching applications such as RFID, robotics, and machine vision. The device is also used in the power supply of embedded systems, relays and power grids, and for driving MOSFET switches and OLED displays.
Overall, the NVMFS5C404NAFT1g is an outstanding N-channel FET that is suitable for a range of applications. With its high switching speed and low saturation voltage, the device can be used in a variety of applications. Additionally, its low on-state resistance allows it to be used in power switching and general-purpose applications. As such, the NVMFS5C404NAFT1G is a great choice for both power switching and general-purpose applications.
The specific data is subject to PDF, and the above content is for reference
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