NVMFS5C404NLAFT3G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NVMFS5C404NLAFT3G is a single N-Channel PowerTrench MOSFET. This MOSFET is designed for high-efficiency DC-DC conversion in portable designs, with a fast switching speed and low gate charge. It is manufactured using a 3 Spacer Gate Process to reduce on-resistance characteristics.

Features:

• N-Channel PowerTrench MOSFET
• Low on-resistance & low gate charge
• Fast switching speed
• Excellent package CSP for easy soldering
• IV Curves for our N-channel MOSFETs
• RoHS Compliant

Application Field:

The NVMFS5C404NLAFT3G is ideal for switching applications like DC-DC converters, telecom and datacom low power converters, power switching and other power related applications. It is specifically designed for use in applications that require fast switching, high-efficiency and low gate charge performance. The low on-resistance characteristics helps in providing optimised power savings and high current flow capabilities.

Working Principle:

The NVMFS5C404NLAFT3G is a single N-Channel PowerTrench MOSFET. This device utilizes a combination of a three spacer gate process for reduced on-resistance characteristics. In this process a special Oxynitride passivation layer is used to reduce the size of the trench and hence it reduces the on-resistance as compared to the non-planar process at a similar level of junction breakdown voltage. Additionally, a field-effect that occurs when the gate voltage increases is used to turn on the device, thus allowing the current to flow.

In operation the gate voltage is raised above the threshold voltage. This enables gate current to flow and a high field of electrons to be drawn towards the drain. This field of electrons exerts an inverse effect on the gate and induces a floating inversion layer that extends from the gate to the channel. The electrons in the floating inversion layer fill up the channel and a current flows from source to drain.

Conclusion:

The NVMFS5C404NLAFT3G is a single N-Channel PowerTrench MOSFET. It is designed for high-efficiency and low gate charge applications, making it suitable for fast switching, high-efficiency and low gate charge performance. This MOSFET is an ideal choice for applications like DC-DC converters, telecom and datacom low power converters, power switching, and other power-related applications. Its low on-resistance characteristics optimise power savings and high current flow capabilities and performance, making it the perfect device for high-efficiency DC-DC conversion in portable designs.

The specific data is subject to PDF, and the above content is for reference