NVMFS5C404NWFAFT1G Allicdata Electronics
Allicdata Part #:

NVMFS5C404NWFAFT1G-ND

Manufacturer Part#:

NVMFS5C404NWFAFT1G

Price: $ 1.27
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 40V 53A 378A 5DFN
More Detail: N-Channel 40V 53A (Ta), 378A (Tc) 3.9W (Ta), 200W ...
DataSheet: NVMFS5C404NWFAFT1G datasheetNVMFS5C404NWFAFT1G Datasheet/PDF
Quantity: 1000
1500 +: $ 1.14108
Stock 1000Can Ship Immediately
$ 1.27
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NVMFS5C404NWFAFT1G is a logic level N-channel enhancement mode Field Effect Transistor (FET) that is sourced from Toshiba. NVMFS5C404NWFAFT1G belongs to the Single Mosfet family and can be used for a wide range of applications. It is a logic level FET capable of switching power at low and medium voltages, and can also be used for signal switching.The NVMFS5C404NWFAFT1G is specifically designed to operate in the linear region of the drain current vs. drain-source voltage (VDS) transfer characteristic. This ensures low on-resistance and high efficiency, making it ideal for switching applications. Furthermore, its low capacitance coupled with a low gate threshold voltage (Vgsth) enables fast signal switching and low power consumption.NVMFS5C404NWFAFT1G is a single depletion type N-channel MOSFET, and its maximum drain-source voltage rating is 5V. The gate-source voltage (Vgs) and maximum drain current rating (Id) of the NVMFS5C404NWFAFT1G are ±20V, and 24A, respectively. It is also capable of handling peak drain currents up to 80A.NVMFS5C404NWFAFT1G is suitable for various switching and amplifier applications. It is commonly used in motor control, power supplies, DC-to-DC converters, automotive circuits, switching relays, electronic appliances, and lighting.The NVMFS5C404NWFAFT1G features a low gate threshold voltage (Vgs(th)) that allows it to be operated at very low voltages, making it suitable for low-power applications such as resource-constrained systems and embedded applications. The NVMFS5C404NWFAFT1G also offers higher frequency operation and higher speed switching.The NVMFS5C404NWFAFT1G has a very small on-resistance (Rds(on)) and a typical value of 6mΩ. The on-resistance of the NVMFS5C404NWFAFT1G is much lower than that of other conventional FETs, allowing it to achieve higher power densities without sacrificing efficiency. Additionally, its low gate charge makes it one of the most efficient FETs on the market.The NVMFS5C404NWFAFT1G is also equipped with a built-in temperature compensation that helps protect the device from over-temperature and thermal runaway. This allows the NVMFS5C404NWFAFT1G to operate reliably even in high-stress environments.In summary, the NVMFS5C404NWFAFT1G is an excellentSingleMosfet FET that offers exceptional performance in various applications. Because of its low on-resistance, high efficiency, and temperature compensation, the NVMFS5C404NWFAFT1G is an ideal choice for sensitive, low-power, and high-frequency applications.

The specific data is subject to PDF, and the above content is for reference

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