Allicdata Part #: | NVMFS5C404NWFAFT1G-ND |
Manufacturer Part#: |
NVMFS5C404NWFAFT1G |
Price: | $ 1.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 53A 378A 5DFN |
More Detail: | N-Channel 40V 53A (Ta), 378A (Tc) 3.9W (Ta), 200W ... |
DataSheet: | NVMFS5C404NWFAFT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 1.14108 |
FET Feature: | -- |
Power Dissipation (Max): | 3.9W (Ta), 200W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN, 5 Leads |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 53A (Ta), 378A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 0.7 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 128nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 8400pF @ 25V |
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The NVMFS5C404NWFAFT1G is a logic level N-channel enhancement mode Field Effect Transistor (FET) that is sourced from Toshiba. NVMFS5C404NWFAFT1G belongs to the Single Mosfet family and can be used for a wide range of applications. It is a logic level FET capable of switching power at low and medium voltages, and can also be used for signal switching.The NVMFS5C404NWFAFT1G is specifically designed to operate in the linear region of the drain current vs. drain-source voltage (VDS) transfer characteristic. This ensures low on-resistance and high efficiency, making it ideal for switching applications. Furthermore, its low capacitance coupled with a low gate threshold voltage (Vgsth) enables fast signal switching and low power consumption.NVMFS5C404NWFAFT1G is a single depletion type N-channel MOSFET, and its maximum drain-source voltage rating is 5V. The gate-source voltage (Vgs) and maximum drain current rating (Id) of the NVMFS5C404NWFAFT1G are ±20V, and 24A, respectively. It is also capable of handling peak drain currents up to 80A.NVMFS5C404NWFAFT1G is suitable for various switching and amplifier applications. It is commonly used in motor control, power supplies, DC-to-DC converters, automotive circuits, switching relays, electronic appliances, and lighting.The NVMFS5C404NWFAFT1G features a low gate threshold voltage (Vgs(th)) that allows it to be operated at very low voltages, making it suitable for low-power applications such as resource-constrained systems and embedded applications. The NVMFS5C404NWFAFT1G also offers higher frequency operation and higher speed switching.The NVMFS5C404NWFAFT1G has a very small on-resistance (Rds(on)) and a typical value of 6mΩ. The on-resistance of the NVMFS5C404NWFAFT1G is much lower than that of other conventional FETs, allowing it to achieve higher power densities without sacrificing efficiency. Additionally, its low gate charge makes it one of the most efficient FETs on the market.The NVMFS5C404NWFAFT1G is also equipped with a built-in temperature compensation that helps protect the device from over-temperature and thermal runaway. This allows the NVMFS5C404NWFAFT1G to operate reliably even in high-stress environments.In summary, the NVMFS5C404NWFAFT1G is an excellentSingleMosfet FET that offers exceptional performance in various applications. Because of its low on-resistance, high efficiency, and temperature compensation, the NVMFS5C404NWFAFT1G is an ideal choice for sensitive, low-power, and high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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