Allicdata Part #: | NVMFS5C410NLAFT1G-ND |
Manufacturer Part#: |
NVMFS5C410NLAFT1G |
Price: | $ 0.81 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 50A 330A 5DFN |
More Detail: | N-Channel 40V 50A (Ta), 330A (Tc) 3.8W (Ta), 167W ... |
DataSheet: | NVMFS5C410NLAFT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.73148 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Ta), 330A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 0.82 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 143nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 8862pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.8W (Ta), 167W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN, 5 Leads |
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NVMFS5C410NLAFT1G is one of the most widely-sourced field-effect transistors (FETs). It is a single-gate, low-threshold metal-oxide-semiconductor FET (MosFET) used in a variety of applications, including high-speed and high-temperature circuits. This article will discuss the various applications of NVMFS5C410NLAFT1G and its working principles.
As a single-gate FET, NVMFS5C410NLAFT1G is used in applications where complex switching, current switching, and voltage switching is required. It has a low threshold voltage of 0.5V, meaning it can be used in high-speed applications. Additionally, its high-temperature operating range makes it suitable for applications operating under temperature extremes, such as those in automobiles.
NVMFS5C410NLAFT1G is widely used in motor applications, due to its fast switching capabilities. It is capable of delivering high power quickly and efficiently, making it ideal for high-current motor speeds and precise control of torque. Additionally, it can be used in high-speed switching applications, such as power dividing circuits, clocks, counters, and automatic control systems.
The working principle of NVMFS5C410NLAFT1G is based on the number of electrons that can pass through the gate channel. When a voltage is applied to the gate terminal, the channel is opened and electrons move to the channel. This creates a wide electron channel, and so electricity can pass through it.
NVMFS5C410NLAFT1G is also used in telecommunication and aerospace applications, as it is capable of handling high frequencies without significant bias current consumption. Additionally, its high-speed switching capabilities make it ideal for data transmission.
NVMFS5C410NLAFT1G can also be used in analog circuits for controlling current and voltage, as well as for providing power-amplification of signals. In general, this FET is lower in cost than other single-gate FETs, making it attractive for those applications.
Overall, NVMFS5C410NLAFT1G is a highly versatile MosFET widely used in a variety of applications. It has a low threshold voltage and high-temperature operating range, and can be used in motor control, high-speed switching, power dividing, data transmission, and analog circuit applications. Additionally, its working principle is based on the number of electrons passing through the gate channel.
The specific data is subject to PDF, and the above content is for reference
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