| Allicdata Part #: | NVMFS5C410NLWFAFT3G-ND |
| Manufacturer Part#: |
NVMFS5C410NLWFAFT3G |
| Price: | $ 0.76 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 40V 50A 330A 5DFN |
| More Detail: | N-Channel 40V 50A (Ta), 330A (Tc) 3.8W (Ta), 167W ... |
| DataSheet: | NVMFS5C410NLWFAFT3G Datasheet/PDF |
| Quantity: | 1000 |
| 5000 +: | $ 0.68445 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | 8-PowerTDFN, 5 Leads |
| Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.8W (Ta), 167W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 8862pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 143nC @ 10V |
| Series: | Automotive, AEC-Q101 |
| Rds On (Max) @ Id, Vgs: | 0.82 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Ta), 330A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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NVMFS5C410NLWFAFT3G is a single FET, which stands for Field Effect Transistor. This type of transistor is the most common type of semiconductor device used in the electronics industry today. The FET has a range of applications, including in switching circuits, power supply regulation, voltage regulation, and signal amplification.
NVMFS5C410NLWFAFT3G is a very powerful transistor, with a high on-state current capability. It also has a very low on-state voltage drop, so it can be used in high-power applications where a low power level is needed to drive the load. In this case, the FET acts like an electronic switch, and the amount of current it can conduct depends on the amount of voltage drop across it. This is why the FET is often used in power and voltage regulation circuit designs.
The working principle of this single FET is based on the splitting of the energy bands in the semiconductor material. When a voltage is applied to the gate of the FET, a depletion layer forms and this layer blocks the flow of current between the source and drain. Due to this property, the FET can be used as a switch, controlling the flow of current between the source and drain. The total amount of current that can be conducted is proportional to the amount of voltage applied, which is why the FET is used in amplifier applications.
NVMFS5C410NLWFAFT3G has several applications across a range of industries. It can be used in a variety of switching circuits, from high voltage relay switches to low voltage power supply control circuits. It can also be used as a signal amplifier, where it is used to boost the gain of a signal. The low on-state voltage drop of the FET makes it ideal for power regulation, as it can help to maintain a constant voltage or current level, or to limit the amount of current discharged from a battery. NVMFS5C410NLWFAFT3G is also used in many different ways to improve the performance of a system, such as providing additional power or boosting the signal of a circuit.
In summary, NVMFS5C410NLWFAFT3G is a single FET, which is the most common type of semiconductor device used in the electronics industry today. It has a range of applications, including in switching circuits, power supply regulation, voltage regulation, and signal amplification. The working principle of this single FET is based on the splitting of the energy bands in the semiconductor material, and the amount of current that can be conducted depends on the amount of voltage drop across it. NVMFS5C410NLWFAFT3G is a powerful device, with a high on-state current capability and low on-state voltage drop, making it ideal for power regulation applications.
The specific data is subject to PDF, and the above content is for reference
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NVMFS5C410NLWFAFT3G Datasheet/PDF