NVMFS5C430NAFT1G

Vgs(th) (Max) @ Id:	3.5V @ 250µA
Package / Case:	8-PowerTDFN, 5 Leads
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 106W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3300pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	47nC @ 10V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	1.7 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	35A (Ta), 185A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to NVMFS5C430NAFT1G

The NVMFS5C430NAFT1G is a versatile and reliable field effect transistor (FET) that is ideal for any application requiring a logic level-enhanced high power RF transmitter. It is able to perform exceptionally well in medium to high-power applications and provides excellent heat dissipation for improved reliability. With its superb power handling capability, the NVMFS5C430NAFT1G is capable of delivering high power outputs, whilst remaining both cost-effective and reliable.

Application Field

The NVMFS5C430NAFT1G can be used in the fields of radio broadcasting, wireless telecoms, data transmission, audio amplification and other power electronics. It is also used in a variety of automotive and industrial applications requiring high power output and/or logic level modulation.The NVMFS5C430NAFT1G also provides excellent performance when used in mobile antenna systems, satellite communications and any application requiring a high power RF transmitter. It is also suitable for numerous broadcast and security applications such as alarm systems, wireless microphones and RFID systems.

Working Principle

The NVMFS5C430NAFT1G is a modern day field effect transistor (FET) that operates using the MOSFET (metal-oxide-semiconductor field-effect transistor) principle. This device basically consists of a “gate” and two “source” and “drain” terminals that sit between a substrate and an insulated gate electrode.At the most basic level, the FET operates by applying a voltage at the gate terminal. This voltage controls the voltage output at the source and drain terminals. As a result, the signal at the gate is amplified and can be used for logic-level signal modulation, resulting in a powerful RF transmitter.Moreover, the NVMFS5C430NAFT1G features an advanced thermal design that provides excellent thermal dissipation. This prevents the device from overheating during operation and ensures that the device remains reliable even in high power applications.

Conclusion

The NVMFS5C430NAFT1G is a single field effect transistor that offers a versatile, reliable and cost-effective solution for any application requiring a logic level-enhanced high power RF transmitter. It operates using the MOSFET principle and provides excellent heat dissipation for improved reliability. In addition, the NVMFS5C430NAFT1G is ideal for a variety of radio broadcasting, wireless telecoms, data transmission and audio amplification applications, as well as automotive and industrial applications.

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