| Allicdata Part #: | NVMFS5C612NLAFT1G-ND |
| Manufacturer Part#: |
NVMFS5C612NLAFT1G |
| Price: | $ 0.81 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 60V 38A 250A 5DFN |
| More Detail: | N-Channel 60V 38A (Ta), 250A (Tc) 3.8W (Ta), 167W ... |
| DataSheet: |  NVMFS5C612NLAFT1G Datasheet/PDF |
| Quantity: | 1000 |
| 1500 +: | $ 0.72139 |
Specifications
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 1.36 mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 91nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 6660pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 3.8W (Ta), 167W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
| Package / Case: | 8-PowerTDFN, 5 Leads |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 38A (Ta), 250A (Tc) |
Description
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NVMFS5C612NLAFT1G is a single-pole, double-throw, three-pin, N-channel logic-level Enhancement Mode MOSFET. This FatFET or SuperFET is widely used in many applications, such as power and analog/mixed signal applications. It is a low-voltage, low-current device that is ideal for use in space-constrained applications. The NVMFS5C612NLAFT1G device features a low-on-resistance (<0.8Ω), low-threshold voltage (<1.0V@4V gate drive), low-gate-charge (<0.4nC), and low-gate input capacitance (<7pF) that make it suitable for switch, level shifter and analog/mixed signal applications, including DC/DC conversion, power management, H-bridge motor driver, and general switch. This FatFET is also ideal for battery management applications and power-up sequencing. The NVMFS5C612NLAFT1G can acomplish switch, level shifter and analog/mixed signal applications. In switch and level-shifter, the NVMFS5C612NLAFT1G can be used to connect signals, while in analog/mix signal applications, such as DC/DC conversion, power management, H-bridge motor driver and general switch, the device can be used as a current limiter and phase control. The NVMFS5C612NLAFT1G also has benefit in its voltage scalability, which can be used to adjust the output voltage by raising or lowering the supply voltage. The working principle of the NVMFS5C612NLAFT1G is based on the principle of the Field Effect Transistor (FET). The NVMFS5C612NLAFT1G is an N-type metal oxide semiconductor (NMOS) FET device. It is composed of an insulated gate electrode, which is surrounded by a MOS channel. When a voltage is applied to the gate of the device, a gate-to-source electric field is generated, which modulates the conductivity of the channel. The ability to modulate the conductivity of the channel means that the device can be used as a switch or a level-shifter, as well as an analog/mixed signal device. The NVMFS5C612NLAFT1G is a versatile device that can be used in many applications. It is suitable for applications where size and low-voltage, low-current devices are necessary. It is also suitable for battery management applications and power-up sequencing. Due to its low on-resistance and very low-threshold voltage, this FatFET is ideal for switch, level shifter and analog/mixed signal applications. Thanks to its voltage scalability, it can also be used to adjust the output voltage as needed.The specific data is subject to PDF, and the above content is for reference
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